FDS6575 - P-Channel -20V 10A PowerTrench MOSFET | onsemi
MPN: FDS6575 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.68 | $0.68 |
| 10 | $0.54 | $5.40 |
| 100 | $0.41 | $41.00 |
| 500 | $0.33 | $165.00 |
| 1,000 | $0.28 | $280.00 |
FDS6575 Overview
A P-channel power MOSFET is a voltage-controlled semiconductor switch in which a negative gate-to-source voltage creates a conductive channel between drain and source. Within the power management hierarchy (MOSFET -> discrete power semiconductor -> power management), P-channel devices are prized for high-side load switching because they can be driven directly from a low-side control signal without a charge pump or bootstrap supply, simplifying gate-drive circuitry versus N-channel high-side designs.
Key features include low on-resistance for minimal conduction loss, low gate charge for fast, efficient switching in DC-DC converter and load-switch circuits, and the 2.5V-specified gate threshold that allows direct drive from logic-level controllers and battery rails. The rugged gate construction improves robustness against voltage transients, and the wide 2.5V-8V gate drive window covers battery-powered (1-2S Li-ion), 3.3V, and 5V logic environments.
Technically, the PowerTrench trench-gate process achieves a low-RDS(on) x Qg figure of merit, reducing both conduction and switching losses. The 13 mOhm on-resistance at -4.5V gate drive yields an estimated conduction loss of about 1.3W at the full -10A rating, so adequate PCB copper is required.
Typical applications include high-side load switches in battery-powered portable equipment, battery protection and reverse-polarity circuits, DC-DC converter power stages, hot-swap and power-path management in notebooks and industrial systems.
Design consideration: because this is a 2.5V-specified part, verify that the minimum gate drive in your circuit keeps RDS(on) within the power budget; at very low VGS the on-resistance rises significantly.
This page adds value beyond the datasheet by synthesizing drop-in alternatives, engineering design notes, comparison tables, and sourcing information in one place.
Drop-in alternatives for FDS6575 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with FDS6575 (same form factor and footprint) — differing in Technology, Package, Continuous Drain Current (ID), RoHS Status, Configuration.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
FDS6575A
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRF7351TRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.68 / Unit
View Datasheet →IRF7416TRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.32 / Unit
View Datasheet →IRF7105TRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.3 / Unit
View Datasheet →IRF7306TRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.55 / Unit
View Datasheet →FDS6575 Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -20 V |
| Continuous Drain Current (ID) | -10 A |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | 2.5 V to 8 V |
| Technology | PowerTrench (rugged gate) |
| Package | SOIC-8 (SO-8) |
| Mounting Type | Surface Mount |
| Configuration | Single MOSFET |
| RoHS Status | Compliant |
FDS6575 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
Safe Operating Area (estimated from datasheet limits)
Typical Applications
FDS6575 is suitable for 6 applications: High-Side Load Switch, Battery Protection and Power Path, DC-DC Converter Power Stage, Reverse Polarity Protection, Hot-Swap and Inrush Control, Portable and Handheld Device Power Management.
High-Side Load Switch
The FDS6575 fits high-side load switching because its P-channel topology turns on when the gate is pulled low relative to the source, eliminating bootstrap capacitors and high-side driver ICs. With -20V rating and 13 mOhm on-resistance at -4.5V, an estimated conduction loss of 1.3W occurs at a full 10A load, acceptable for switched rails up to several amps without heatsinking. Place the device between the input rail and the load, with a pull-up resistor from gate to source and an open-drain logic signal driving the gate through a series resistor. The 2.5V to 8V gate drive window lets 3.3V microcontrollers switch battery rails directly, and the rugged gate construction withstands ring transients during hot switching events in notebooks, docking stations, and industrial power distribution boards.
Recommended
Battery Protection and Power Path
In single-cell and two-cell battery systems, the FDS6575 serves as a protection or power-path MOSFET in series with the battery. Its -20V VDS rating covers overvoltage transients on 1S/2S Li-ion rails, and the 2.5V-specified gate means battery-management ICs can drive it directly even as the cell discharges to low voltage. Low gate charge reduces switching energy during fast disconnect events, and the 13 mOhm on-resistance limits series drop to an estimated 65 mV at 5A, preserving runtime. Typical circuits place the FDS6575 in the high-side return path controlled by a protection IC that monitors overcurrent, overvoltage, and deep-discharge conditions. Verify that RDS(on) at the protection IC's minimum drive voltage still meets the voltage-drop budget of the end product.
Recommended
DC-DC Converter Power Stage
The FDS6575 can implement the P-channel control element in buck converters and push-pull topologies where simplicity of gate drive outweighs the lower RDS(on) of N-channel alternatives. PowerTrench trench technology gives it a favorable RDS(on) x Qg figure of merit, reducing both conduction and switching losses at moderate frequencies (typically 100-500 kHz). With -10A continuous capability, it handles multi-amp point-of-load rails; the SOIC-8 drain pins (5-8) require solid copper pour and via stitching for thermal management at the estimated 1.3W full-load dissipation. In synchronous designs, pair it with an N-channel counterpart or use it in asymmetric half-bridge topologies. Confirm SOA at your PWM duty cycle and inductor peak currents, and keep the gate loop tight to limit ringing with the rugged gate spec margin.
Recommended
Reverse Polarity Protection
A P-channel MOSFET in series with a supply rail provides near-zero-drop reverse polarity protection: under correct polarity the FDS6575 conducts through its channel with an estimated 130 mV drop at 10A (13 mOhm), far better than a series Schottky diode losing 0.3-0.5V. When the input is reversed, the MOSFET blocks because its body diode orientation and gate drive prevent channel formation. The -20V rating suits 12V automotive and industrial rails with headroom, and the 2.5V-8V drive window covers both logic and battery-level control signals. Add a zener clamp between gate and source when the rail exceeds the VGS maximum to protect the gate oxide during load-dump-like transients. This circuit appears widely in automotive accessory modules, IoT gateways, and battery-operated industrial sensors where efficiency matters.
Recommended
Hot-Swap and Inrush Control
The FDS6575's rugged gate construction makes it tolerant of the controlled slow turn-on used in hot-swap circuits. In a typical implementation, a gate RC network sets slew rate so bulk capacitor inrush current is limited, while the FDS6575 operates briefly in its linear region; the -10A SOA rating and SOIC-8 thermal path absorb the transient energy. The 13 mOhm on-resistance then minimizes steady-state loss once the rail is established. This topology is common in notebook adapter inputs, server backplane branches, and industrial 12V/24V field power entries. Estimated sizing: limit inrush to 5A for 5 ms and verify against the datasheet SOA curve for your ambient temperature. Ensure the gate zener clamps VGS within its absolute maximum during fault conditions, and monitor PCB copper temperature rise under repetitive hot-plug events.
Recommended
Portable and Handheld Device Power Management
Battery-powered consumer devices use the FDS6575 to switch peripherals, displays, and radios on and off to conserve standby power. The 2.5V-specified gate allows direct drive from single-cell Li-ion rails (3.0-4.2V) through a small NMOS level shifter or MCU GPIO with open-drain output, avoiding dedicated driver ICs. Its 13 mOhm on-resistance keeps dissipation negligible at the 1-3A levels typical of mobile SoC rails, and the low gate charge permits frequent switching for duty-cycled peripherals without measurable battery penalty. The compact SOIC-8 surface-mount package fits dense portable PCBs, and RoHS-compliant packaging meets global consumer regulations. Designers should budget the quiescent pull-up current of the gate network, since it flows continuously while the switch is off in sleep states.
Recommended
Recommended Products Summary
Engineering reference data for FDS6575 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | FDS6575A | IRF7351TRPBF | IRF7416TRPBF |
|---|---|---|---|---|
| Package | SOIC-8 | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same |
| Brand | onsemi (Fairchild) | onsemi (Fairchild) | Infineon (IR) | Infineon (IR) |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage | -20 V | -20 V | -30 V | -20 V |
| Technology | PowerTrench (rugged gate) | PowerTrench (rugged gate) | HexFET | HexFET |
Key Differentiators
- Higher continuous current in SOIC-8 P-channel class (vs IRF7416TRPBF)
- Low-voltage logic-level drive (vs IRF7351TRPBF)
- Rugged gate PowerTrench construction (vs FDS6575A)
Design Notes
Estimated: at 10A continuous and 13 mOhm on-resistance, conduction loss is about 1.3W (P = I^2 x R = 100 x 0.013). The SOIC-8 package relies on the drain pins (5-8) for heat extraction into PCB copper; use at least 1 square inch of 1 oz copper on the drain net with multiple thermal vias. Derate current at elevated ambient temperature per the datasheet load-current-versus-case-temperature curve.
Route the gate connection (pin 1) with a short, low-inductance trace to the driver or pull-up resistor. Multiple source (2-4) and drain (5-8) pins should each be connected with adequate copper; do not rely on a single pin for the full current path. Place a low-ESR ceramic capacitor close to the drain-source loop when switching inductive loads to clamp ringing.
Do not exceed the gate-source absolute maximum rating: when switching rails above the VGS limit (e.g., 12V or 24V systems), add a zener clamp and series resistor between gate and source. Also verify RDS(on) at your actual minimum gate drive; the 13 mOhm figure applies at -4.5V, and conduction loss rises substantially at -2.5V drive. Check polarity carefully - P-channel switching is active-low.
Compliance Information
RoHS compliance per onsemi product listing. Other compliance attributes not confirmed in provided data.
