IAUC120N04S6L009ATMA1 vs IAUCN04S7L019ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6L009ATMA1 by Infineon and IAUCN04S7L019ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΞ© 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 β ActiveInfineon
IAUCN04S7L019ATMA1 - 40V 1.91mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L019ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6L009ATMA1 | IAUCN04S7L019ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 150 A (per datasheet header) | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100Β°C) | [DATA_NEEDED: I_D at TC=100C] | β |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed I_DM] | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 0.9 mΞ© | β |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: VGS(th) typ/range] | β |
| Gate Charge Q<sub>g</sub> | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25Β°C) | 150 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-34 (5x6 mm leadless, SS08) | PG-TDSON-8-33 |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| AEC-Q101 Automotive Qualification | Yes | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Avalanche Energy E<sub>AS</sub> | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Series | β | OptiMOSβ’ 7 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | β | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | β | 1.91 mΞ© |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | β | [DATA_NEEDED: Vgs(th) typical/max value] |
| Gate Charge (Q<sub>g</sub>) | β | [DATA_NEEDED: Qg total/nominal value] |
| Operating Temperature | β | -55Β°C to +175Β°C (junction) |
| Power Dissipation (P<sub>D</sub>) | β | [DATA_NEEDED: Pd max at 25C] |
| Thermal Resistance Junction-to-Ambient | β | [DATA_NEEDED: RthJA value] |
| Automotive Qualification | β | AEC-Q101 qualified |
| Packaging | β | Tape & Reel (13-inch reel) |
| Standard Pack Quantity | β | 5000 pieces |
| Ordering Code Suffix | β | ATMA1 (Tape & Reel 13") |