IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon
MPN: IAUCN04S7L019ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.85 | $8.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.63 | $315.00 |
| 1,000 | $0.55 | $550.00 |
| 5,000 | $0.48 | $2,400.00 |
IAUCN04S7L019ATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal power switch that uses an electric field at the gate to modulate current flow between drain and source. N-channel MOSFETs require a positive gate-to-source voltage to turn on and are the dominant low-side/high-side switch topology in power electronics. Within the broader taxonomy, MOSFETs sit under discrete semiconductors → transistors → power transistors, and the OptiMOS™ 7 family represents Infineon's latest-generation TrenchFET cells optimized for lowest figure-of-merit R<sub>DS(on)</sub>×Q<sub>g</sub>.
Key features include an ultra-low 1.91 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, an automotive-grade AEC-Q101 qualification, a logic-level compatible gate threshold, and an exposed-drain PG-TDSON-8-33 package that delivers a thermal resistance on the order of a single-digit °C/W to the PCB copper. The OptiMOS™ 7 cell geometry reduces switching losses by approximately 30% versus the previous OptiMOS™ 5 generation while halving R<sub>DS(on)</sub>×Q<sub>g</sub> figure of merit.
Typical applications include brushless DC motor drives (BLDC) in electric vehicle auxiliaries, e-scooter and e-bike motor controllers, high-current synchronous buck converters for 12 V/24 V automotive rails, battery protection and load switching in 12 V lead-acid and Li-ion systems, and USB-PD / high-current Type-C power paths. The 120 A continuous current rating comfortably covers 100 A-class automotive e-fuse and motor-phase designs.
When designing with this part, verify that V<sub>DS</sub> transient ringing under hard-switching stays below 40 V at minimum load, and place the gate driver within 10 mm of the gate pin to suppress parasitic turn-on. For multi-MOSFET parallel configurations, gate-source resistors of 10-100 Ω per device are recommended for dynamic current balancing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, giving engineers an at-a-glance decision tool for selecting or replacing the IAUCN04S7L019ATMA1 in automotive power designs.
Drop-in alternatives for IAUCN04S7L019ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN04S7L019ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Junction Temperature, Drain-Source Voltage (VDS), Automotive Qualification.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC60N04S6L039ATMA1
✅ Drop-In✓ In Stock
$0.72 / Unit
View Datasheet →BSC027N04LSGATMA1
✅ Drop-In✓ In Stock
$0.54 / Unit
View Datasheet →BSC0901NSATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC032N04LSATMA1
✅ Drop-In✓ In Stock
$0.32 / Unit
View Datasheet →BSC059N04LS6ATMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →IAUCN04S7L019ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 7 |
| FET Type | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΩ |
| Package | PG-TDSON-8-33 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C to +175°C (junction) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Packaging | Tape & Reel (13-inch reel) |
| Standard Pack Quantity | 5000 pieces |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") |
IAUCN04S7L019ATMA1 Pin Configuration
| Pin 1 | Source — Source (low-side connection) |
| Pin 2 | Source — Source (low-side connection) |
| Pin 3 | Source — Source (low-side connection) |
| Pin 4 | Gate — Gate (drive input) |
| Pin 5 | Source — Source (low-side connection) |
| Pin 6 | Source — Source (low-side connection) |
| Pin 7 | Source — Source (low-side connection) |
| Pin 8 | Drain — Drain (high-side connection) |
| Pin EP | Drain (Exposed Pad) — Drain thermal pad (PCB copper heatsink) |
Safe Operating Area (DC, T<sub>C</sub>=25°C)
Typical Applications
IAUCN04S7L019ATMA1 is suitable for 6 applications: Automotive BLDC Motor Drive, E-Mobility Motor Controller (E-scooter, E-bike), 12 V / 24 V Synchronous Buck Converter, Automotive Battery Protection & E-Fuse, USB Type-C Power Delivery / Hot-Swap, Industrial High-Current Load Switch.
Automotive BLDC Motor Drive
The IAUCN04S7L019ATMA1 is purpose-built for automotive brushless DC (BLDC) motor drive half-bridge and three-phase inverter topologies at 12 V and 24 V bus levels. Its 120 A continuous drain current rating covers 50-100 A class motor-phase currents typical of electric power steering, electric water pumps, oil pumps, HVAC blowers, and engine cooling fans. The 1.91 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V keeps conduction dissipation to roughly 19 W at 100 A, while the AEC-Q101 qualification and PG-TDSON-8-33 exposed thermal pad enable direct PCB copper heatsinking without external heatsinks in the 5-15 kW power range. Infineon's OptiMOS™ 7 cell geometry reduces switching losses ~30% versus OptiMOS™ 5, supporting 20-50 kHz PWM operation for low-torque-ripple sinusoidal commutation.
Recommended
E-Mobility Motor Controller (E-scooter, E-bike)
The IAUCN04S7L019ATMA1 delivers excellent performance in e-motorcycle, e-scooter, and e-bike traction motor controllers running from 36 V or 48 V Li-ion battery packs. The 40 V V<sub>DS</sub> rating provides adequate transient margin for 12S (43.2 V max) Li-ion configurations with inductive ringing. At 60 A peak phase current the device dissipates only 6.9 W per MOSFET, allowing six-MOSFET three-phase designs to fit compact PCB footprints under 50 mm×50 mm. AEC-Q101 stress testing ensures the part survives under-seat vibration, thermal cycling, and humidity typical of personal e-mobility. The PG-TDSON-8-33's exposed pad supports bottom-side cooling via the PCB copper pour, eliminating discrete heatsinks for lower BOM cost.
Recommended
12 V / 24 V Synchronous Buck Converter
In 12 V to 24 V input synchronous buck converters delivering 20-60 A output current, the IAUCN04S7L019ATMA1 serves as the low-side synchronous rectifier MOSFET to maximize efficiency at high duty cycles. The 1.91 mΩ R<sub>DS(on)</sub> keeps synchronous-rectifier conduction loss comparable to or lower than the high-side switch, while the OptiMOS™ 7 low Q<sub>g</sub> enables sub-100 ns dead-time transitions for minimum body-diode loss. The 40 V V<sub>DS</sub> comfortably handles 24 V industrial bus transients up to 36 V clamped. Designers can pair this part with a complementary high-side 40 V OptiMOS™ device or use it as both switches in 12 V-input point-of-load converters for FPGA core rails.
Recommended
Automotive Battery Protection & E-Fuse
The IAUCN04S7L019ATMA1 functions as the main disconnect switch in 12 V and 24 V automotive battery protection units and solid-state e-fuse designs. Its 120 A continuous rating covers the typical 100-200 A fuse rating of auxiliary 12 V batteries, while the 1.91 mΩ R<sub>DS(on)</sub> limits voltage drop to <200 mV at 100 A load. The AEC-Q101 qualification ensures the part survives automotive underhood thermal cycling from -40°C to +125°C. The PG-TDSON-8-33 footprint integrates a thermal pad for direct PCB copper heatsinking, essential during 1-10 ms short-circuit interruption events where I²R heating can exceed 10 kW momentarily.
Recommended
USB Type-C Power Delivery / Hot-Swap
The IAUCN04S7L019ATMA1 is ideal for 12 V automotive USB Type-C Power Delivery (PD) hot-swap and load-switch applications where 5 A continuous and 100 W peak power delivery is required. The 40 V V<sub>DS</sub> rating supports 12 V automotive battery hot-swap transients, while the low 1.91 mΩ R<sub>DS(on)</sub> minimizes insertion loss for USB-PD 3.1 EPR 28 V/36 V/40 V modes when properly derated. The PG-TDSON-8-33's small footprint (5 mm×6 mm) enables compact in-cabin USB Type-C port modules. Infineon's OptiMOS™ 7 cell also delivers low Q<sub>gd</sub>/Q<sub>gs</sub> ratio for clean dV/dt immunity during hot-plug events.
Recommended
Industrial High-Current Load Switch
Beyond automotive, the IAUCN04S7L019ATMA1 is suitable for industrial 24 V high-current load switches, robotic motor drives, and factory automation power distribution where 100 A+ switching is required. The 40 V V<sub>DS</sub> covers 24 V industrial bus with transient headroom, while the 120 A continuous rating supports 50-100 A typical industrial motor and solenoid loads. The exposed thermal pad of PG-TDSON-8-33 enables direct PCB heatsinking in IP65 sealed enclosures where external heatsinks are impractical. Designers can pair this MOSFET with isolated gate drivers such as the BTT3050EJXUMA1 for high-side or low-side switching up to 100 kHz PWM operation.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7L019ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC60N04S6L039ATMA1 | BSC027N04LSGATMA1 | BSC0901NSATMA1 | BSC032N04LSATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-33 | PG-TDSON-8-33 (same) | PG-TDSON-8-33 (same) | PG-TDSON-8-33 (same) | PG-TDSON-8-33 (same) |
| Family | OptiMOS™ 7 | OptiMOS™ 6 | OptiMOS™ 5 | OptiMOS™ | OptiMOS™ 5 |
| V<sub>DS</sub> Max | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current | 120 A | 60 A | 85 A | 100 A | 85 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΩ | 3.9 mΩ | 2.7 mΩ | 9.0 mΩ | 3.2 mΩ |
| Automotive Qualified (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Lowest R<sub>DS(on)</sub> in Infineon 40V OptiMOS PG-TDSON-8-33 family (vs BSC0901NSATMA1)
- Latest-generation OptiMOS™ 7 cell technology with lowest figure-of-merit (vs IAUC60N04S6L039ATMA1)
- Higher continuous drain current rating (120 A) than closest alternative (vs BSC027N04LSGATMA1)
- AEC-Q101 automotive qualified with full PPAP traceability (vs Industrial-grade 40V N-MOSFETs)
Design Notes
Estimated: at 100 A continuous drain current and 1.91 mΩ R<sub>DS(on)</sub>, conduction loss is P = I²R = 100² × 0.00191 = 19.1 W. With PG-TDSON-8-33 R<sub>thJA</sub> of approximately 40°C/W on a 1 oz 4-layer PCB with 1 sq-inch copper pour, junction temperature rise is ~40°C/W × 19.1 W = 764°C above ambient - clearly above the 175°C max. Practical conclusion: continuous 100 A operation requires significant copper area (>=4 sq-inch on top + bottom layers), thermal vias to inner copper planes, or forced-air cooling. For 50 A continuous, the same PCB heatsink design is adequate with margins.
Place the gate driver within 10 mm of the IAUCN04S7L019ATMA1 gate pin to minimize parasitic gate-loop inductance (target L<sub>g</sub> <5 nH). Add a 10 Ω gate-source resistor directly across gate-source pins to suppress parasitic turn-on from dV/dt coupling. Use a kelvin-source connection when the package exposes a separate source-sense pin; the PG-TDSON-8-33 typically uses pins 1-3,5-7 as source with gate at pin 4. Place input/output bulk capacitors within 5 mm of drain/source pads to reduce switching-loop inductance below 2 nH.
Do not exceed V<sub>DS</sub>=40 V under any transient condition including avalanche; clamp inductive loads with TVS diodes or RCD snubbers rated for the energy. Verify that V<sub>GS</sub> stays within the absolute maximum rating of ±20 V - gate-drive spikes from parasitic inductance can exceed this during hard switching. For parallel-MOSFET configurations, use individual gate-source resistors (10-100 Ω) per device for dynamic current sharing; do not rely solely on R<sub>DS(on)</sub> matching which has ±30% part-to-part variation. Always check SOA curves for pulsed operation at elevated case temperature.
The PG-TDSON-8-33 exposed thermal pad requires thermal vias (typically 9-16 vias of 0.3 mm drill on 1.0 mm pitch) to inner copper planes for effective heat spreading. Use 1 oz copper on outer layers minimum, with 2 oz preferred for high-current designs. The land pattern should follow JEDEC MO-240 for PG-TDSON-8-33 (5 mm × 6 mm body). Keep high-current traces wide (>2 mm per 10 A) and use multiple vias in parallel for current transitions between layers. Creepage distance from drain to source on the PCB should be at least 2 mm for 40 V rating per IPC-2221.
For high-frequency switching (>50 kHz) in synchronous buck or BLDC applications, the IAUCN04S7L019ATMA1's low Q<sub>g</sub> enables fast turn-on/turn-off transitions but generates high dV/dt (>5 kV/µs) at the phase node. This can couple into adjacent signals via parasitic capacitance. Maintain >5 mm spacing between the phase-node copper and any low-level analog signal traces. Add a small RC snubber (1-10 Ω + 1-10 nF) across drain-source if EMI is excessive. Use a gate-drive pull-down resistor of 10 kΩ to ensure the MOSFET stays off during controller reset or power-up.
Compliance Information
AEC-Q101 (automotive discrete semiconductor) qualified per Infineon OptiMOS™ 7 datasheet. RoHS and REACH compliant. Lead-free reflow compatible. Halogen-free per industry-standard test methods.
