IAUC120N04S6N009ATMA1 vs IAUCN04S7N015GATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6N009ATMA1 by Infineon and IAUCN04S7N015GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6N009ATMA1
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΞ© OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 β ActiveInfineon
IAUCN04S7N015GATMA1
IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
IAUCN04S7N015GATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6N009ATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.60 | $2.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D, Tc) | 120 A | β |
| Pulsed Drain Current | [DATA_NEEDED: pulsed I_D value] | β |
| R_DS(on) max @ V_GS=10V | 0.9 mΞ© | β |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: V_GS(th) typical value] | β |
| Total Gate Charge Q_g typ | [DATA_NEEDED: Q_g typical] | β |
| Power Dissipation (Tc) | 150 W | β |
| Thermal Resistance R_thJC max | 1.0 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55C to +175C |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS | Compliant | β |
| Lead-Free / Halogen-Free | Yes (per Infineon product page) | β |
| Product Family | β | OptiMOS 7 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) | β | 165 A (Tc) |
| Power Dissipation (P_D) | β | 96 W (Tc) |
| R_DS(on) max | β | 1.53 mΞ© at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: total gate charge] |
| RoHS Status | β | Compliant |