IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
MPN: IAUCN04S7N015GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.85 | $4.85 |
| 10 | $4.36 | $43.60 |
| 100 | $3.59 | $359.00 |
| 500 | $3.05 | $1,525.00 |
| 1,000 | $2.62 | $2,620.00 |
| 3,000 | $2.21 | $6,630.00 |
IAUCN04S7N015GATMA1 Overview
A power MOSFET is a voltage-controlled three-terminal device (gate, drain, source) that uses an electric field on the gate insulator to modulate conduction between drain and source. The OptiMOS 7 family is Infineon's latest-generation 40 V trench MOSFET platform, optimized for ultra-low R<sub>DS(on)</sub> per unit area. Within the device hierarchy, this part sits as: power MOSFET -> discrete semiconductor -> N-channel trench MOSFET -> automotive-qualified switching transistor. Its very low on-resistance reduces I²R conduction loss, making it well suited to high-current 12 V/24 V automotive and industrial rails.
Key differentiating features include the SSO4G 5x6 source-down footprint intended for IMS (Insulated Metal Substrate) PCBs, where the exposed source pad is soldered directly to the metal substrate for minimum thermal impedance. The device is qualified to AEC-Q101, supports 100% R<sub>g</sub>-tested production, and is rated for -55C to +175C junction operation. A low Q<sub>G</sub> and low Q<sub>OSS</sub> further reduce switching loss at the high dV/dt nodes found in 48 V mild-hybrid and high-current eMobility designs.
Architecturally, OptiMOS 7 uses an advanced trench cell pitch combined with a refined epitaxial profile to push figure-of-merit (FOM = R<sub>DS(on)</sub> x Q<sub>G</sub>) below the previous OptiMOS 5 generation. Compared with the prior generation, the same die size now delivers lower on-resistance and faster switching, which directly improves converter efficiency and reduces heatsink demands. The PG-THSOG-4-1 (SSO4G) package replaces legacy D2PAK footprints in many 24 V/48 V designs while keeping a similar thermal resistance.
Typical applications include automotive 12 V/24 V load switching (e-fans, water pumps, PTC heaters), 48 V mild-hybrid systems, high-current DC-DC converter synchronous rectification, and industrial brushless DC motor drives. In each of these uses, the device replaces larger DPAK/D2PAK parts, freeing PCB area while still meeting automotive reliability.
When designing with this MOSFET, observe strict gate-drive discipline: use a 10 V V<sub>GS</sub> (with adequate source inductance control) and minimize the gate-loop PCB area to limit ringing. Because the SSO4G package is source-down, the PCB land pattern and thermal via array are critical - insufficient vias will push R<sub>thJC</sub> higher than the datasheet figure.
This page synthesizes distributor pricing, drop-in automotive-grade alternatives from the same Infineon OptiMOS 7 family, and practical PCB-layout guidance not collected in the manufacturer datasheet alone.
Drop-in alternatives for IAUCN04S7N015GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN04S7N015GATMA1 (same form factor and footprint) — differing in Package, Automotive Qualification, Technology, MSL Level, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN04S7N019GATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IAUCN04S7N027GATMA1
✅ Drop-In✓ In Stock
$0.72 / Unit
View Datasheet →IAUCN04S7L050HATMA1
✅ Drop-In✓ In Stock
$0.83 / Unit
View Datasheet →ISZ230N10NM6ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.71 / Unit
View Datasheet →IAUC60N10S5L110ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.66 / Unit
View Datasheet →IAUCN04S7N015GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 |
| Channel Type | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) | 165 A (Tc) |
| Power Dissipation (P_D) | 96 W (Tc) |
| R_DS(on) max | 1.53 mΩ at V_GS=10 V |
| Package | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Operating Junction Temperature | -55C to +175C |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| Mounting Type | Surface Mount (IMS-compatible source-down) |
| MSL Level | 1 (per JEDEC J-STD-020) |
IAUCN04S7N015GATMA1 Pin Configuration
| Pin 1 | Gate — Gate terminal - connect to gate driver, 10 V V_GS recommended for full R_DS(on) |
| Pin 2 | Source — Source terminal - internally bonded to source pad |
| Pin 3 | Drain — Drain terminal - internally bonded to drain pad |
| Pin 4 | Source Pad (exposed) — Source-down exposed pad for IMS mounting and thermal dissipation |
Safe Operating Area (DC, Tj=25C)
Typical Applications
IAUCN04S7N015GATMA1 is suitable for 6 applications: Automotive 12 V E-Fan / Water Pump Load Switch, 48 V Mild-Hybrid Synchronous Rectification, Industrial Brushless DC (BLDC) Motor Drive, High-Current Hot-Swap / OR-ing Controller, Automotive PTC Heater Switching, Server / Telecom 12 V Battery-Backup Switch.
Automotive 12 V E-Fan / Water Pump Load Switch
The IAUCN04S7N015GATMA1 fits automotive 12 V E-fan and water-pump load switching because its 1.53 mΩ R_DS(on) keeps conduction loss under 5 W even at 80 A continuous current, while the 165 A drain rating provides 2x safety margin over typical 40-80 A fan stall currents. The AEC-Q101 qualification satisfies body-electronics reliability targets, and the SSO4G source-down package dissipates heat directly to the IMS substrate, eliminating an external heatsink. Placed between the 12 V battery rail and the motor, it acts as a low-side switch driven by a logic-level gate driver; unlike a relay it is silent, contactless, and PWM-able for soft-start. Trade-off: at VIN=16 V load-dump transients the 40 V V_DS still leaves adequate headroom but a TVS clamp is recommended on the bus.
Recommended
48 V Mild-Hybrid Synchronous Rectification
The IAUCN04S7N015GATMA1 is well suited to 48 V mild-hybrid synchronous rectification stages that step 48 V down to 12 V through a buck converter. Its 1.53 mΩ R_DS(on) minimizes I²R loss at 100 A+ inductor currents, and the SSO4G source-down package lands on an IMS substrate for thermal extraction in the high-current loop. With 40 V V_DS, this part fits the 12 V low-side synchronous rectifier position where it sees at most the 12 V rail plus ringing. The low Q_G and Q_OSS reduce dead-time loss in the 100-200 kHz switching frequency range typical of 48 V converters. Trade-off: do not use it on the 48 V high-side; instead choose a 100 V OptiMOS 7 part such as IAUC60N10S5L110ATMA1.
Recommended
Industrial Brushless DC (BLDC) Motor Drive
The IAUCN04S7N015GATMA1 is ideal for industrial BLDC motor drives operating on 24 V or 48 V rails where the half-bridge switches must handle 50-100 A phase currents at 20-50 kHz PWM. Its 1.53 mΩ R_DS(on) yields high inverter efficiency, the 165 A I_D rating provides robust inrush headroom during motor start, and the SSO4G 5x6 source-down footprint simplifies IMS-based inverter PCB design common in 1-5 kW motor drives. Used as the low-side FET in each phase leg, paired with a higher-voltage OptiMOS 7 high-side part, the system achieves >97% efficiency at full load. Trade-off: at 48 V operation, verify V_DS margin against bus ringing and add a snubber if needed.
Recommended
High-Current Hot-Swap / OR-ing Controller
The IAUCN04S7N015GATMA1 suits high-current 12 V/24 V hot-swap and OR-ing controller stages where a low-R_DS(on) MOSFET in series with the rail must survive inrush transients while dissipating minimal steady-state loss. Its 1.53 mΩ R_DS(on) means a 100 A OR-ing path drops only 153 mV and dissipates 15 W - manageable on an IMS substrate with adequate copper. The 40 V V_DS covers 24 V industrial rails with margin, and the 175C junction rating handles the thermal stress of hot-plug events. Trade-off: gate-charge-driven inrush control requires an external gate-driver IC; the bare MOSFET alone will not slew-rate-limit.
Recommended
Automotive PTC Heater Switching
The IAUCN04S7N015GATMA1 fits automotive PTC heater switching at 12 V where currents of 50-80 A flow through resistive heater elements that demand low conduction loss and high reliability. Its 1.53 mΩ R_DS(on) minimizes voltage drop on the supply rail (critical for cold-crank scenarios), the 165 A continuous drain rating exceeds typical 60 A PTC currents by 2.5x, and AEC-Q101 qualification satisfies cabin-comfort electronic modules. The SSO4G package on IMS enables compact under-seat heater-driver PCBs. Trade-off: PWM dimming at low duty cycle can push high I²R into the MOSFET during the on-pulse; ensure thermal mass on the substrate is adequate.
Recommended
Server / Telecom 12 V Battery-Backup Switch
The IAUCN04S7N015GATMA1 fits server and telecom 12 V battery-backup OR-ing switches where the load must be transferred between mains supply and battery without interruption. Its 1.53 mΩ R_DS(on) keeps steady-state loss under 10 W even at 80 A, the SSO4G footprint enables compact IMS-based power-stage design, and the 40 V V_DS comfortably covers 12 V rails with load-dump margin. AEC-Q101 qualification is overkill for stationary use but the device is highly reliable. Trade-off: for 48 V datacenter bus applications, select a 100 V OptiMOS 7 part instead, since the -015 will not survive 48 V bus transients.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7N015GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N019GATMA1 | IAUCN04S7N027GATMA1 | IAUCN04S7L050HATMA1 | ISZ230N10NM6ATMA1 | IAUC60N10S5L110ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-THSOG-4-1 (SSO4G 5x6) | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same |
| Drain-Source Voltage (V_DS) | 40 V | 40 V | 40 V | 40 V | 100 V | 100 V |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Gate Threshold Variant | Standard V_GS(th) | Standard V_GS(th) | Standard V_GS(th) | Logic-level V_GS(th) | Standard V_GS(th) | Standard V_GS(th) |
Key Differentiators
- Lowest R_DS(on) in the IAUCN04S7 SSO4G family (vs IAUCN04S7N027GATMA1)
- Source-down SSO4G footprint for IMS thermal extraction (vs Legacy D2PAK MOSFETs)
- Standard V_GS(th) for 10 V gate drive (vs IAUCN04S7L050HATMA1)
- AEC-Q101 automotive qualification (vs Industrial-grade only MOSFETs)
Design Notes
The SSO4G (PG-THSOG-4-1) package is source-down - the exposed pad is the SOURCE terminal, not the drain. Solder the source pad directly to the IMS (Insulated Metal Substrate) or to a large copper pour with an array of thermal vias (0.3 mm drill, 1 mm pitch, filled if possible). Insufficient thermal vias will degrade R_thJC above the datasheet value and risk thermal runaway at high I_D. Keep the gate-loop trace short and narrow to minimize gate-loop inductance; ringing above 20 V V_GS can punch through the gate oxide.
Minimize the source-inductance path between the MOSFET source pad and the gate-driver ground reference. A 1 nH source inductance combined with 50 A/ns di/dt produces 50 V of negative gate-drive transient, which can re-trigger the device or destroy the gate. Place the gate-driver return via within 5 mm of the source pad. Use a 4-layer PCB with a dedicated ground plane directly under the SSO4G footprint to provide the lowest-impedance return path.
Estimated thermal dissipation: at I_D = 100 A and R_DS(on) = 1.53 mΩ, conduction loss is I²R = 15.3 W. With an SSO4G package on an IMS substrate (typical R_thJC ~0.5 C/W), the junction-to-case rise is 7.6 C, well within the 175C maximum. However at 165 A continuous, loss rises to ~42 W and junction temperature becomes the limiting factor - derate to ~120 A continuous for 100C ambient operation. Always validate thermal design with thermocouple measurements on the IMS, not just electrical derating curves.
Do not use IAUCN04S7N015GATMA1 on the high-side of a 48 V bus - the 40 V V_DS rating will be exceeded during 48 V load-dump transients, leading to avalanche failure. For 48 V applications, choose IAUC60N10S5L110ATMA1 (100 V) on the high-side and keep the -015 on the 12 V low-side position. Also avoid operating below V_GS=8 V - the R_DS(on) curve rises sharply and may exceed thermal limits at full load.
Drive the gate with a 10 V V_GS source capable of 1-2 A peak current (e.g. dedicated gate-driver IC, not a microcontroller GPIO). The total gate charge of OptiMOS 7 40 V parts at this die size is in the 50-100 nC range; a weak driver will slow switching edges, increasing switching loss and exacerbating ringing. Place a 10 Ω gate-source resistor close to the gate pin to dampen high-frequency ringing.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon datasheet. RoHS and REACH compliant. Halogen-free per Infineon product page. MSL 1 per JEDEC J-STD-020 (no dry-pack required).
