IAUC120N04S6N010ATMA1 vs IAUCN04S7N015GATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6N010ATMA1 by Infineon and IAUCN04S7N015GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveInfineon
IAUCN04S7N015GATMA1
IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
IAUCN04S7N015GATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6N010ATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $2.21 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V(BR)DSS) | 40 V | β |
| Continuous Drain Current (Id, Tc) | 150 A | β |
| Power Dissipation (Pd, Tc) | 150 W | β |
| RDS(on) at VGS=10V (typ) | 1.0 mΞ© | β |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΞ© | β |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 Β΅A) | β |
| Technology | OptiMOS 6 | β |
| Package | PG-TDSON-8-34 (5x6 mm leadless) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) | β |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | β |
| Polarity | Single N-channel | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) | β | 165 A (Tc) |
| Power Dissipation (P_D) | β | 96 W (Tc) |
| R_DS(on) max | β | 1.53 mΞ© at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Operating Junction Temperature | β | -55C to +175C |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: total gate charge] |