IAUC120N06S5L011ATMA1 vs ISC080N10NM6ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L011ATMA1 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L011ATMA1
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 β ActiveInfineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5L011ATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 60 V (S5 generation) | OptiMOSβ’ 6 100V |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 60 V | β |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | β |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing | β |
| R_DS(on) max | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] | β |
| Power Dissipation (P_D) | 188 W at T_C = 25 Β°C | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-53 (TDSON-8 FL, 5 mm Γ 6 mm) | PG-TDSON-8 FL (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, per datasheet) |
| Avalanche Energy Rated | Yes (EAS) | β |
| Drain-Source Voltage (VDS) Max | β | 100 V |
| Continuous Drain Current (ID) at Ta | β | 13 A |
| Continuous Drain Current (ID) at Tc | β | 75 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | β | 8.05 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 3.3 V at 36 Β΅A |
| Operating Temperature Range | β | -55Β°C to +175Β°C (TJ max, per datasheet) |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Qualification | β | Industrial grade (per Infineon OptiMOS 6 100V family) |