IAUC120N06S5L015ATMA1 vs IAUA210N10S5N024AUMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L015ATMA1 by Infineon and IAUA210N10S5N024AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveInfineon
IAUA210N10S5N024AUMA1
IAUA210N10S5N024AUMA1 - 100V 2.4mΞ© 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5L015ATMA1 | IAUA210N10S5N024AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $1.65 |
| Technology | N-Channel MOSFET (OptiMOS 5) | MOSFET (Metal Oxide), N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | β |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΞ© | β |
| Gate Charge (Qg, typ) | 88 nC | β |
| Power Dissipation (PD, Tc=25C) | 167 W | β |
| Operating Temperature Range | -55C to +175C (Tj) | -55Β°C to +175Β°C (TJ) |
| Package | PG-TDSON-8-43 (Surface Mount) | PG-HSOF-5-4 (7Γ8 mmΒ² sTOLL) |
| Mounting Type | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | β |
| Typical Application | Automotive DC-DC, battery switches, motor drives | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Continuous Drain Current (ID) @ Tj | β | 210 A |
| Continuous Drain Current (ID) @ TC=25Β°C | β | [DATA_NEEDED: ID at TC=25Β°C] |
| On-Resistance RDS(on) Max @ VGS=10V | β | 2.4 mΞ© |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th) value] |
| Gate Charge Qg (typ) | β | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Power Dissipation (PD) @ TC=25Β°C | β | 238 W |
| Lead-Free | β | Yes |
| Avalanche Energy Rated | β | Yes (per datasheet) |