IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
MPN: IAUC120N06S5L015ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.39 | $139.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.04 | $1,040.00 |
| 5,000 | $0.92 | $4,600.00 |
IAUC120N06S5L015ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route and convert electrical energy. Within the broader taxonomy it sits as: MOSFET -> transistor -> discrete semiconductor -> semiconductor. The OptiMOS 5 family is Infineon's fifth-generation trench MOSFET platform, optimized for very low on-resistance per unit silicon area, fast switching, and low gate charge to minimize conduction and switching losses in high-current power paths.
Key features include 1.5 mΩ maximum RDS(on) at VGS=10 V, ultra-low gate charge of 88 nC typical for fast switching at high frequency, and an operating temperature range suitable for automotive underhood environments. The PG-TDSON-8-43 package exposes the drain through a large metal tab for direct PCB cooling, enabling very high current handling in a compact 5x6 mm footprint.
Technical depth: the device uses Infineon's advanced OptiMOS 5 trench cell architecture which trades slightly higher gate capacitance for dramatically lower RDS(on) per area versus prior generations. The 60 V drain-source rating gives substantial margin over 12 V and 24 V automotive bus voltages, supporting transient robustness up to the avalanche rating. The 88 nC total gate charge keeps driver losses low at 100 kHz+ switching frequencies typical of high-current synchronous DC-DC converters.
Typical applications include high-current automotive 12 V and 48 V DC-DC converter stages, battery isolation switches in electric vehicle powertrains, motor drive inverter half-bridges, and high-power OR-ing / hot-swap circuits in server and telecom power supplies. The part is also well suited to industrial synchronous rectification where every milliohm of conduction loss translates into tangible efficiency gains.
Design consideration: although the silicon can carry 235 A continuously at Tj, achieving this in practice requires substantial PCB copper pour and thermal vias under the exposed pad; otherwise the junction will derate the usable current well below the headline number. Plan thermal management as the first step, not the last.
This page synthesizes distributor pricing, drop-in alternatives, and practical thermal design guidance for the IAUC120N06S5L015ATMA1 that go beyond the manufacturer datasheet abstract.
Drop-in alternatives for IAUC120N06S5L015ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUC120N06S5L015ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, MSL Level, Series.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC120N06S5L015ATMA2
✅ Drop-In📋 Reference alternative (not in catalog)
IQDH88N06LM5CGSCATMA1
✅ Drop-In✓ In Stock
$2.31 / Unit
View Datasheet →ISC015N06NM5LF2ATMA1
✅ Drop-In✓ In Stock
$2.21 / Unit
View Datasheet →IPC100N04S5L1R5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.18 / Unit
View Datasheet →IQEH68NE2LM7UCGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.35 / Unit
View Datasheet →ISC037N12NM6ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$3.62 / Unit
View Datasheet →IAUC120N06S5L015ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ |
| Gate Charge (Qg, typ) | 88 nC |
| Power Dissipation (PD, Tc=25C) | 167 W |
| Operating Temperature Range | -55C to +175C (Tj) |
| Package | PG-TDSON-8-43 (Surface Mount) |
| Mounting Type | Surface Mount (exposed pad) |
| Automotive Qualification | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | ±20 V |
| RoHS Status | Compliant |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A |
| Typical Application | Automotive DC-DC, battery switches, motor drives |
IAUC120N06S5L015ATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input (drive with 10 V VGS for full enhancement) |
| Pin 2 | Source — Source connection (Kelvin source on adjacent pin for gate drive return) |
| Pin 3 | Source — Source connection |
| Pin 4 | Source — Source connection |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Drain (Tab) — Drain and exposed thermal pad on bottom of package |
Safe Operating Area (DC, Tj=25C)
Typical Applications
IAUC120N06S5L015ATMA1 is suitable for 6 applications: Automotive 48 V DC-DC Converter, Battery Disconnect Switch, Motor Drive Half-Bridge, Server OR-ing / Hot-Swap, Industrial Synchronous Rectifier, Solar Inverter Power Stage.
Automotive 48 V DC-DC Converter
The IAUC120N06S5L015ATMA1 is well matched to high-current 48 V automotive DC-DC converter stages because its 1.5 mΩ RDS(on) and 60 V VDS rating provide the margin needed for 48 V bus transients. In a synchronous buck converter the device is used as the synchronous rectifier on the 48 V side, where its 88 nC Qg keeps driver losses low at 100 kHz switching. Its AEC-Q101 qualification permits deployment in mild-hybrid and EV powertrain modules. Compared to a 40 V part, the 60 V rating gives design margin against load-dump spikes. The exposed PG-TDSON-8-43 pad must be soldered to ample copper pour with thermal vias to sustain continuous high current.
Recommended
Battery Disconnect Switch
Battery disconnect switches in EV and industrial battery packs require an N-channel MOSFET that can carry hundreds of amps continuously with very low voltage drop. The IAUC120N06S5L015ATMA1 with 1.5 mΩ RDS(on) drops only ~235 mV at 150 A load, keeping dissipation manageable. Its 60 V rating covers 48 V battery packs including transient surges during switch events. AEC-Q101 qualification is mandatory for automotive traction batteries. Designers typically parallel two of these devices and use a dedicated gate driver such as 1ED3124MC12HXUMA1 to control turn-on and turn-off dV/dt. Robust thermal design with copper pours and thermal vias is essential to deliver the rated current.
Recommended
Motor Drive Half-Bridge
For high-current motor drive half-bridges, the IAUC120N06S5L015ATMA1 serves as either the high-side or low-side switch. Its 1.5 mΩ RDS(on) reduces conduction losses in continuous-current motor phases, and the 60 V rating supports 24 V and 36 V motor buses common in industrial robotics. The 88 nC gate charge allows PWM switching up to 50 kHz without excessive driver loss. In an H-bridge driving a BLDC motor the part is paired with a complementary low-side FET and a gate driver such as 2ED21064S06JXUMA1. Thermal management via the exposed pad is critical to keep Tj below 150 C under sustained motor stall currents.
Recommended
Server OR-ing / Hot-Swap
In redundant server and telecom power shelves, the IAUC120N06S5L015ATMA1 acts as an OR-ing FET between two 48 V supplies. Its 1.5 mΩ RDS(on) reduces voltage drop and power dissipation in the steady-state parallel path, while the 60 V rating tolerates transients on the 48 V bus. AEC-Q101 qualification is not required for telecom but provides extra reliability margin. A dedicated OR-ing controller or hot-swap driver monitors VDS and rapidly disconnects a failing supply; the low RDS(on) minimizes heat sinking needs. Compared to traditional Schottky OR-ing, this MOSFET solution dramatically improves efficiency at high current.
Recommended
Industrial Synchronous Rectifier
In high-current synchronous rectification stages of industrial SMPS, the IAUC120N06S5L015ATMA1 replaces Schottky diodes to gain efficiency. At 50 A output current, the 1.5 mΩ RDS(on) dissipates only 3.75 W versus ~20 W for a Schottky, allowing higher power density. The 60 V rating supports 36 V and 48 V industrial bus voltages. The 88 nC gate charge is compatible with standard synchronous rectifier controllers and self-driven synchronous topologies. The PG-TDSON-8-43 footprint is pin-compatible with multiple Infineon OptiMOS 5 generations, simplifying second-source qualification. Thermal vias under the exposed pad are mandatory.
Recommended
Solar Inverter Power Stage
The IAUC120N06S5L015ATMA1 fits low-voltage solar inverter power stages up to 48 V battery-bus architectures. Its 1.5 mΩ RDS(on) and 60 V rating are ideal for the synchronous buck/boost stages that interface the panel or battery to a 48 V DC bus. AEC-Q101 qualification provides extra robustness against the thermal cycling typical of outdoor solar installations. The PG-TDSON-8-43 package enables compact designs where board space is at a premium. Designers pair it with a high-side FET and a half-bridge gate driver such as 2ED21064S06JXUMA1 for full-bridge inverter legs.
Recommended
Recommended Products Summary
Engineering reference data for IAUC120N06S5L015ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC120N06S5L015ATMA2 | IQDH88N06LM5CGSCATMA1 | ISC015N06NM5LF2ATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-43 | PG-TDSON-8-43 - same | PG-TDSON-8-43 - same | PG-TDSON-8-43 - same | PG-TDSON-8-43 - same |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 |
Key Differentiators
- Ultra-low RDS(on) of 1.5 mΩ for a 60 V surface-mount part (vs ISC015N06NM5LF2ATMA1)
- AEC-Q101 qualified for automotive designs (vs IPC100N04S5L1R5ATMA1)
- Compact PG-TDSON-8-43 footprint with large thermal pad (vs IQEH68NE2LM7UCGATMA1)
Design Notes
Estimated: at VDS=30 V saturated and ID=100 A, the part dissipates I^2 * R = 100^2 * 0.0015 = 15 W. The PG-TDSON-8-43 junction-to-ambient thermal resistance is around 50 C/W on a minimal JEDEC test board, but drops to 15-20 C/W on a 1 oz copper pour with 9 thermal vias under the exposed pad. A real-world 2-layer board with adequate copper can sustain 50 A continuously; to reach the headline 235 A you need substantial forced-air cooling or a cold plate attached to the drain tab.
Solder the exposed drain pad directly to a copper pour sized to at least 1 square inch of 2 oz copper, with an array of 0.3 mm thermal vias connecting the top copper to internal ground planes. Place input/output capacitors and gate drive components within 5 mm of the package to minimize parasitic inductance, which can otherwise create voltage overshoot on the drain exceeding the 60 V rating during switching transitions.
Do not exceed VGS of ±20 V - the IAUC120N06S5L015ATMA1 has a typical gate oxide breakdown near 25 V. Use a gate-source Zener clamp of 16-18 V if the gate driver can produce overshoot. Also avoid operating continuously at the absolute maximum drain current; thermal runaway will occur if the heat sink cannot keep Tj below 150 C. Finally, do not substitute this 60 V part into designs originally specified for 40 V or 80 V OptiMOS - the gate drive threshold and SOA differ.
Keep the gate drive loop (gate driver output to gate to source to gate driver ground return) area under 1 cm^2 to minimize parasitic inductance and prevent unwanted gate ringing. Use a wide source return trace or Kelvin connection to the gate driver ground reference for high di/dt switching. Place a small RC snubber (10 ohm + 1 nF) across the drain-source if ringing exceeds 20% of VDS in your prototype.
Compliance Information
AEC-Q101 qualified per Infineon product page. RoHS and REACH compliant per Infineon datasheet. Lead-free and halogen-free per OptiMOS 5 family datasheet.
