IAUC120N06S5L015ATMA1 vs IAUC50N08S5N102ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L015ATMA1 by Infineon and IAUC50N08S5N102ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveInfineon
IAUC50N08S5N102ATMA1
IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon
IAUC50N08S5N102ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5L015ATMA1 | IAUC50N08S5N102ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.51 |
| Technology | N-Channel MOSFET (OptiMOS 5) | β |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | β |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΞ© | β |
| Gate Charge (Qg, typ) | 88 nC | β |
| Power Dissipation (PD, Tc=25C) | 167 W | β |
| Operating Temperature Range | -55C to +175C (Tj) | -55Β°C to +175Β°C |
| Package | PG-TDSON-8-43 (Surface Mount) | β |
| Mounting Type | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | β |
| Typical Application | Automotive DC-DC, battery switches, motor drives | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25Β°C | β | 50 A |
| On-Resistance (RDS(on)) | β | 10.2 mΞ© @ 25 A, 10 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Gate-Source Voltage (VGS) Max | β | Β±20 V |
| Total Gate Charge (Qg) | β | 21 nC @ 10 V |
| Input Capacitance (Ciss) | β | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25Β°C | β | 60 W |
| Package / Case | β | PG-TDSON-8-33 |
| Qualification | β | AEC-Q101 |