IAUC120N06S5L015ATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L015ATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5L015ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.86 |
| Technology | N-Channel MOSFET (OptiMOS 5) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | β |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΞ© | β |
| Gate Charge (Qg, typ) | 88 nC | β |
| Power Dissipation (PD, Tc=25C) | 167 W | β |
| Operating Temperature Range | -55C to +175C (Tj) | -55Β°C to +175Β°C (TJ) |
| Package | PG-TDSON-8-43 (Surface Mount) | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Mounting Type | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| Gate-Source Voltage (VGS) max | Β±20 V | Β±20 V (typical Infineon OptiMOS 7 limit) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, typical for this package) |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | β |
| Typical Application | Automotive DC-DC, battery switches, motor drives | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | Automotive OptiMOS 7 |
| Transistor Type | β | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |