IAUC120N06S5L032ATMA1 vs BSC014N06NSATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L032ATMA1 by Infineon and BSC014N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 β Active
Specification Comparison
| Parameter | IAUC120N06S5L032ATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (60 V) | OptiMOS 5 |
| Transistor Type | N-Channel, Enhancement Mode | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | 60 V | β |
| Continuous Drain Current (I_D, T_j) | 120 A | β |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm | β |
| Power Dissipation (P_D, T_C = 25 C) | 94 W | β |
| Package | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (T_j) | -55C to +150C |
| Technology | OptiMOS 5 Trench | OptiMOS 5 (shielded-gate trench) |
| AEC-Q101 Qualified | Yes | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical and min/max] | β |
| Total Gate Charge Q_G | [DATA_NEEDED: Q_G total at V_GS=10V] | β |
| Drain-Source Voltage (VDS) | β | 60 V |
| Gate-Source Voltage (VGS) Max | β | +/- 20 V |
| Continuous Drain Current (ID) at Ta | β | 30 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | β | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | β | 1.45 mOhm |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 156 W |