IAUC120N06S5L032ATMA1 vs IAUC120N04S6L005ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L032ATMA1 by Infineon and IAUC120N04S6L005ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 β ActiveInfineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΞ© N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5L032ATMA1 | IAUC120N04S6L005ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (60 V) | β |
| Transistor Type | N-Channel, Enhancement Mode | β |
| Drain-to-Source Voltage (V_DS) | 60 V | β |
| Continuous Drain Current (I_D, T_j) | 120 A | β |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm | β |
| Power Dissipation (P_D, T_C = 25 C) | 94 W | β |
| Package | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-53 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (T_j) | β |
| Technology | OptiMOS 5 Trench | OptiMOS 6, N-Channel Trench MOSFET |
| AEC-Q101 Qualified | Yes | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical and min/max] | β |
| Total Gate Charge Q_G | [DATA_NEEDED: Q_G total at V_GS=10V] | β |
| Part Number | β | IAUC120N04S6L005ATMA1 |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 120 A (Tj) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (PD, Tc=25Β°C) | β | 187 W |
| RDS(on) max at VGS=10 V | β | 0.55 mΞ© at 60 A |
| RDS(on) max at VGS=4.5 V | β | 0.85 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±16 V |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Total Gate Charge (Qg) | β | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | β | 11.203 nF at 25 V |
| Output Capacitance (Coss) | β | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | β | 175 pF |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q101 qualified |