IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
MPN: IAUC120N04S6L005ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.19 | $595.00 |
| 1,000 | $1.05 | $1,050.00 |
| 5,000 | $0.92 | $4,600.00 |
IAUC120N04S6L005ATMA1 Overview
An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate is driven above its threshold voltage. Power MOSFETs sit within the broader power-semiconductor hierarchy: power MOSFET -> MOSFET -> FET -> discrete semiconductor. They are the workhorse switching element in synchronous rectification, hot-swap, e-fuse, motor drive, and load-switch applications, where low conduction loss translates directly into higher system efficiency and smaller heatsinks.
Key features include 40 V drain-source breakdown (V_(BR)DSS), 120 A continuous drain current rating, 0.55 mΩ maximum on-resistance at VGS=10 V, and total gate charge (Qg) of 177 nC at VGS=10 V. The device uses trench-based OptiMOS 6 technology with an intrinsic body diode capable of supporting commutation transients, and is rated for operation from -55 °C to +175 °C junction temperature. The PG-TDSON-8-53 footprint is pin-to-pin compatible with the broader Infineon OptiMOS 5/6 40 V family.
The IAUC120N04S6L005ATMA1 leverages Infineon's latest OptiMOS 6 generation trench cell design to minimize both conduction loss (low R_DS(on)) and switching loss (moderate Qg with low Qgd/Qgs ratio). A 175 pF output capacitance C_oss and 11.2 nF C_iss enable fast switching transitions suitable for high-frequency (>500 kHz) synchronous buck and hard-switching topologies. The integrated gate-protection structure provides ±16 V VGS tolerance.
Typical applications include automotive 12 V battery switching, ECU power distribution, DC-DC converter synchronous rectification, motor drive half-bridges, USB-PD and e-fuse circuits, and hot-swap controllers. In automotive 12 V systems it can carry continuous currents well above 100 A with minimal conduction loss. Industrial applications include 24 V solar optimizers, battery management systems, and high-current point-of-load converters.
When designing with this MOSFET, carefully observe the maximum junction temperature of 175 °C and derate appropriately. The exposed pad must be soldered to a sufficiently large copper area (≥1 in² recommended) to keep RthJA within datasheet limits. A 10 Ω gate resistor plus a local 100 nF VDD bypass cap near the gate-driver supply is recommended to suppress parasitic ringing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, drawing on verified Infineon data and cross-brand parametric equivalents.
Drop-in alternatives for IAUC120N04S6L005ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUC120N04S6L005ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Junction Temperature, MSL Level, Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN04S7L019ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.48 / Unit
View Datasheet →IAUC60N04S6L039ATMA1
✅ Drop-In✓ In Stock
$0.72 / Unit
View Datasheet →IAUC120N06S5L032ATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →NVMFS5C430N
✅ Drop-In📋 Reference alternative (not in catalog)
PSMN1R0-40SSJ
✅ Drop-In📋 Reference alternative (not in catalog)
IAUC120N04S6L005ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IAUC120N04S6L005ATMA1 |
| Technology | OptiMOS 6, N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 120 A (Tj) |
| Power Dissipation (PD, Tc=25°C) | 187 W |
| RDS(on) max at VGS=10 V | 0.55 mΩ at 60 A |
| RDS(on) max at VGS=4.5 V | 0.85 mΩ |
| Gate-Source Voltage (VGS) | ±16 V |
| Gate Threshold Voltage (VGS(th)) | 2 V |
| Total Gate Charge (Qg) | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | 11.203 nF at 25 V |
| Output Capacitance (Coss) | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | 175 pF |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-TDSON-8-53 (5x6 mm) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
IAUC120N04S6L005ATMA1 Pin Configuration
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain (connected to exposed pad) |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
Typical Applications
IAUC120N04S6L005ATMA1 is suitable for 6 applications: Automotive 12 V ECU Power Switching, Synchronous Rectification in DC-DC Converters, Hot-Swap and E-Fuse Controllers, Motor Drive Half-Bridges, Battery Management Systems (BMS) and Protection, USB-PD and High-Current Charging Ports.
Automotive 12 V ECU Power Switching
The IAUC120N04S6L005ATMA1 is purpose-built for 12 V automotive ECU power switching, where its 40 V VDS provides ample load-dump margin (12 V battery plus transient spikes up to 35 V) and its 120 A continuous rating comfortably handles inrush and steady-state currents. With 0.55 mΩ R_DS(on), the device dissipates only ~3.3 W at 80 A continuous, minimizing the heatsinking requirement in space-constrained ECUs. The AEC-Q101 automotive qualification satisfies OEM standards for under-hood and cabin-mounted controllers, including engine management, transmission, ADAS, and body control modules.
Recommended
Synchronous Rectification in DC-DC Converters
The IAUC120N04S6L005ATMA1 serves as a synchronous low-side rectifier in 12 V-to-low-voltage buck converters delivering 30-100 A outputs. The 0.55 mΩ R_DS(on) dominates conduction loss, while the 177 nC Qg keeps switching loss modest at 400-700 kHz switching frequencies typical of automotive POL converters. Compared to a Schottky diode, the synchronous MOSFET configuration reduces rectifier losses by 60-80%, enabling higher power density and 95%+ efficiency in 12 V-to-5 V/3.3 V rails for ADAS processors and infotainment SoCs.
Recommended
Hot-Swap and E-Fuse Controllers
The IAUC120N04S6L005ATMA1 acts as the series pass element in 12 V/24 V hot-swap and e-fuse circuits for server, telecom, and industrial power distribution. Its 0.55 mΩ R_DS(on) keeps insertion loss below 60 mV at 100 A, well within 100 mV OR-ing tolerance, while the 40 V VDS handles transient back-EMF from inductive loads. The 187 W power dissipation rating allows sustained 120 A operation with adequate PCB copper area. AEC-Q101 qualification also makes it suitable for hot-swap in automotive zonal architectures where it provides reverse-battery and over-current protection.
Recommended
Motor Drive Half-Bridges
The IAUC120N04S6L005ATMA1 is well-suited for 12 V/24 V motor drive half-bridges in automotive cooling fans, water pumps, and seat actuators. Its 120 A continuous rating supports peak motor-startup currents up to 200 A for short durations within the SOA envelope, while the 175 °C junction temperature rating tolerates the thermal stress of PWM switching. The PG-TDSON-8-53 footprint allows compact half-bridge layouts with two MOSFETs per motor phase, minimizing loop inductance for clean switching waveforms.
Recommended
Battery Management Systems (BMS) and Protection
In 12 V lead-acid or 48 V mild-hybrid BMS modules, the IAUC120N04S6L005ATMA1 functions as the precharge or disconnect MOSFET. Its 0.55 mΩ R_DS(on) limits continuous current-path loss to under 30 mV at 50 A, while its 120 A rating supports fault-current interruption. The AEC-Q101 qualification and -55 to +175 °C junction range make it robust against underhood temperature extremes. The 40 V VDS also tolerates jump-start transients up to 36 V without avalanche breakdown.
Recommended
USB-PD and High-Current Charging Ports
The IAUC120N04S6L005ATMA1 protects automotive USB-PD and high-current charging ports as an e-fuse switch between the 12 V battery and the PD controller. Its 40 V rating handles load-dump and jump-start transients, and its 120 A continuous capability far exceeds the 5 A/100 W limits of USB-PD 3.1 EPR, providing substantial headroom for short-circuit protection. The 0.55 mΩ R_DS(on) minimizes voltage drop at 5 A, ensuring the connected device sees the full bus voltage. AEC-Q101 automotive grade satisfies OEM USB port requirements.
Recommended
Recommended Products Summary
Engineering reference data for IAUC120N04S6L005ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7L019ATMA1 | IAUC60N04S6L039ATMA1 | IAUC120N06S5L032ATMA1 | NVMFS5C430N | PSMN1R0-40SSJ |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | NXP Semiconductors |
| Package | PG-TDSON-8-53 (5x6 mm) | PG-TDSON-8-53 - same | PG-TDSON-8-53 - same | PG-TDSON-8-53 - same | TDSON-8 (5x6 mm) - same | LFPAK33 (TDSON-8 equiv.) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 60 V | 40 V | 40 V |
| Continuous Drain Current (ID) | 120 A | 120 A | 60 A | 120 A | 100 A | 100 A |
| RDS(on) max at VGS=10 V | 0.55 mΩ | 1.0 mΩ | 0.85 mΩ | 3.2 mΩ | 1.0 mΩ | 1.0 mΩ |
| Technology Generation | OptiMOS 6 | OptiMOS 7 | OptiMOS 6 | OptiMOS 5 | onsemi trench | NXP NextPower |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Key Differentiators
- Lowest R_DS(on) in the Infineon 40 V OptiMOS 6 5x6 TDSON family (vs IAUC60N04S6L039ATMA1)
- OptiMOS 6 generation balances low R_DS(on) with manageable gate charge (vs IAUCN04S7L019ATMA1)
- AEC-Q101 automotive-qualified with full PPAP documentation (vs PSMN1R0-40SSJ (NXP))
Design Notes
Estimated: At ID=120 A and RDS(on)=0.55 mΩ at 175 °C, conduction loss reaches ~12 W and steady-state junction temperature will rise above 175 °C without adequate copper cooling. For continuous operation above 80 A, the PCB must include a continuous copper pour of at least 1 in² on top + bottom layers directly under the exposed pad, ideally connected to inner copper planes through 9-12 thermal vias. Without this, thermal resistance θJA will exceed the datasheet's typical 50 °C/W figure and the part will desate or fail.
Gate-drive loop area must be minimized to avoid ringing and false triggering. Place a 10 Ω gate resistor as close as possible to pin 4 (G), and route the gate return directly to the source pins (1-3 or 6-8) with a short, wide trace rather than to the system ground. Add a 100 nF ceramic bypass capacitor immediately adjacent to the gate-driver supply pin and the IAUC120N04S6L005ATMA1 source pins to provide localized high-frequency decoupling for the gate-drive loop.
Do not exceed VGS=±16 V even transiently. Use a gate-driver with a 10-12 V gate drive supply and clamp with a 12 V Zener diode from gate-to-source for protection against ESD or load-dump-induced gate overvoltage. Also note that body-diode reverse recovery time on this OptiMOS 6 part is moderate; for hard-switched bridge topologies running above 100 kHz, add anti-parallel deadtime (≥100 ns) and consider an external SiC Schottky for bridge cross-conduction protection.
Estimated: For a 12 V-to-3.3 V synchronous buck running at 500 kHz with 50 A output, the low-side IAUC120N04S6L005ATMA1 incurs conduction loss of 0.55 mΩ × (50 A)² × 0.5 duty = ~0.7 W plus switching loss of 0.5 × VDS × ID × (Qg/VGS) × fsw ≈ 0.5 × 12 × 50 × (177 nC / 10) × 500 kHz ≈ 2.7 W. Total ~3.4 W per device. Choose the IAUC120N06S5L032ATMA1 if a higher VDS margin is needed, or the IAUCN04S7L019ATMA1 if Qg matters more than absolute R_DS(on).
Compliance Information
AEC-Q101 automotive-qualified per Infineon product page. RoHS and lead-free per JLCPCB listing (C3278713). Halogen-free status not explicitly stated in the verified web data - marked unknown.
