IAUC120N06S5N022ATMA1 vs IAUC120N04S6N010ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N022ATMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N022ATMA1
IAUC120N06S5N022ATMA1 - 60V, 2.2mΞ© OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N022ATMA1 β ActiveInfineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N022ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $0.68 |
| Drain-Source Voltage (VDS) | 60 V | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) | 170 A (Tj) | β |
| On-Resistance RDS(on) max | 2.2 mΞ© at VGS=10 V | β |
| Power Dissipation (PD) | 136 W (Tc) | β |
| Operating Temperature Range | [DATA_NEEDED: TJ min/max] | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) |
| Package | PG-TDSON-8-34 (TDSON EP 5x6) | PG-TDSON-8-34 (5x6 mm leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 trench | OptiMOS 6 |
| Channel Type | N-Channel | β |
| Pin Count | 8 (with exposed pad) | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes (per Infineon product family convention) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) @4.5V] | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | β | 40 V |
| Continuous Drain Current (Id, Tc) | β | 150 A |
| Power Dissipation (Pd, Tc) | β | 150 W |
| RDS(on) at VGS=10V (typ) | β | 1.0 mΞ© |
| RDS(on) at VGS=10V (max per LCSC excerpt) | β | 1.03 mΞ© |
| Gate-Source Threshold (VGS(th), typ) | β | 3 V (at 90 Β΅A) |
| MSL Level | β | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Gate Drive Recommendation | β | 10 V VGS for full RDS(on) spec |
| Polarity | β | Single N-channel |