IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon
MPN: IAUC120N06S5N022ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.92 | $960.00 |
| 1,000 | $1.68 | $1,680.00 |
IAUC120N06S5N022ATMA1 Overview
A power MOSFET such as the IAUC120N06S5N022 is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between the drain and source terminals. MOSFETs sit within the broader transistor taxonomy, which is a subset of discrete semiconductors; they are foundational building blocks in modern switched-mode power supplies (SMPS), motor drives, and load-switching circuits. Low-voltage N-channel MOSFETs (≤100 V) typically target synchronous rectification, high-current DC-DC conversion, and battery protection, where minimizing RDS(on) and gate charge directly improves system efficiency. This part is AEC-Q101 qualified, positioning it for automotive electronics where reliability under harsh thermal and electrical stress is mandatory.
Key features include a 60 V VDS rating (40 V typical extended operating margin), an exceptionally low maximum RDS(on) of 2.2 mΩ at VGS=10 V, an operating temperature range suitable for automotive environments, and a drain power dissipation of 136 W (Tc). The PG-TDSON-8-34 package provides a low thermal-resistance path through its exposed pad, enabling efficient heat extraction into the PCB copper plane. The OptiMOS-5 cell design further reduces gate charge (Qg) and output capacitance (Coss), improving switching performance at high frequencies. The AEC-Q101 automotive qualification, halogen-free construction, and RoHS compliance make this device a drop-in choice for safety-critical powertrain and chassis applications.
Typical applications include high-current synchronous rectification in 48 V automotive systems, battery management and protection in 12 V/24 V architectures, motor drive H-bridges for electric vehicle auxiliary loads, and high-efficiency DC-DC converters. The combination of ultra-low on-resistance and a compact TDSON footprint is particularly attractive for power-dense designs where board space is constrained but thermal performance must remain robust.
When designing with this part, ensure the PCB copper pour under the exposed pad is maximized to keep junction temperature within safe limits, and select a gate-drive voltage of 10 V for full enhancement; at 4.5 V VGS the RDS(on) is higher and must be re-evaluated against thermal budgets.
Drop-in alternatives for IAUC120N06S5N022ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUC120N06S5N022ATMA1 (same form factor and footprint) — differing in Package, MSL Level, Automotive Qualification, Drain-Source Voltage (VDS), Halogen-Free.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC120N06S5L022ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IAUC120N04S6N009ATMA1
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View Datasheet →IAUC120N04S6N010ATMA1
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View Datasheet →IAUC60N04S6L030HATMA1
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$0.94 / Unit
View Datasheet →IAUC60N10S5L110ATMA1
✅ Drop-In✓ In Stock
$0.66 / Unit
View Datasheet →NTMFS5C612N
✅ Drop-In📋 Reference alternative (not in catalog)
IAUC120N06S5N022ATMA1 Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 170 A (Tj) |
| On-Resistance RDS(on) max | 2.2 mΩ at VGS=10 V |
| Power Dissipation (PD) | 136 W (Tc) |
| Package | PG-TDSON-8-34 (TDSON EP 5x6) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS-5 trench |
| Channel Type | N-Channel |
| Pin Count | 8 (with exposed pad) |
| Automotive Qualification | AEC-Q101 |
| RoHS Status | Compliant |
| Halogen-Free | Yes (per Infineon product family convention) |
IAUC120N06S5N022ATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | D — Drain (also exposed pad, bottom) |
Safe Operating Area
Typical Applications
IAUC120N06S5N022ATMA1 is suitable for 6 applications: 48V Automotive Synchronous Rectification, High-Current Battery Management & Protection, Electric Vehicle Auxiliary Motor Drive, High-Efficiency Isolated DC-DC Converters, Industrial High-Current Load Switch, Solar Inverter & Energy Storage Systems.
48V Automotive Synchronous Rectification
The IAUC120N06S5N022ATMA1's 2.2 mΩ RDS(on) and 170 A continuous drain current make it ideal as a low-side synchronous rectifier in 48 V mild-hybrid DC-DC converters. Placed on the secondary side of an isolated buck topology, the device replaces a Schottky diode, eliminating reverse-recovery charge and reducing conduction loss by up to 60% at full load. The OptiMOS-5 low Qg (gate charge) keeps switching loss minimal even at 200 kHz+ switching frequencies, enabling higher power density. AEC-Q101 qualification ensures reliability under the harsh thermal-cycling and vibration environment of under-hood automotive installations. Use a 10 V gate drive from a dedicated bootstrap driver such as the 2EDL8034G4CXTMA1 to ensure full enhancement and minimum RDS(on).
Recommended
High-Current Battery Management & Protection
In 12 V and 24 V automotive battery management systems (BMS), the IAUC120N06S5N022ATMA1 serves as a high-side or low-side disconnect switch protecting against over-current and short-circuit events. The 170 A continuous current rating comfortably handles 2x transient inrush during cranking pulses, while the 60 V VDS rating provides margin for inductive kickback on long cable harnesses. The AEC-Q101 automotive qualification and halogen-free RoHS compliance meet automotive OEM material requirements. Use it in conjunction with a battery monitor IC such as the TLE42744EV50XUMA1 to form a complete ISO 26262-capable battery protection subsystem for start-stop and micro-hybrid vehicles.
Recommended
Electric Vehicle Auxiliary Motor Drive
The IAUC120N06S5N022ATMA1 is well-suited as the low-side switch in H-bridge or three-phase inverter stages driving auxiliary EV loads such as water pumps, oil pumps, and cooling fans (5-15 A typical). Its 2.2 mΩ RDS(on) minimizes I²R losses during PWM switching, improving inverter efficiency and reducing thermal stress on heatsinks. The exposed-drain pad enables direct PCB copper heatsinking without external heat spreaders, saving cost and board area. Pair the FET with a three-phase gate driver such as the 2EDL8124GXUMA1 or 2ED21064S06JXUMA1 to achieve safe commutation and integrated bootstrap supply. The AEC-Q101 grade ensures compliance with automotive reliability standards for powertrain-adjacent loads.
Recommended
High-Efficiency Isolated DC-DC Converters
In high-density isolated DC-DC converters such as those used in telecom, server, and industrial 48 V-to-PoL applications, the IAUC120N06S5N022ATMA1 functions as the primary-side synchronous rectifier or as a high-current load switch. The ultra-low 2.2 mΩ RDS(on) reduces conduction loss across the wide input-voltage range, while OptiMOS-5's low output capacitance (Coss) minimizes switching loss at 200-500 kHz switching frequencies. This combination yields point-of-load converter efficiencies above 96% at full load, critical for hyperscale data center power architectures where every watt saved at the FET level multiplies across thousands of units. The compact 5x6 mm TDSON footprint enables very high power density on 4-layer PCBs.
Recommended
Industrial High-Current Load Switch
In industrial automation and robotics, the IAUC120N06S5N022ATMA1 acts as a robust high-current load switch for solenoid valves, motor starters, and capacitive-load banks requiring inrush management. The 170 A continuous drain rating handles the 10-50x inrush current typical of large capacitor banks and DC motor armatures without requiring pre-charge circuits. The 60 V VDS rating covers 24 V and 48 V industrial bus rails with comfortable transient margin. Industrial designs benefit from the part's wide SOA at high VDS and high ID, allowing reliable hot-swapping and reverse-battery protection when paired with a smart driver such as the BTG7003A1EPWXUMA2.
Recommended
Solar Inverter & Energy Storage Systems
In photovoltaic (PV) string inverters and battery energy storage (BESS) systems, the IAUC120N06S5N022ATMA1 is used as a low-side synchronous rectifier in boost converters interfacing between low-voltage battery banks (24-48 V) and higher-voltage DC buses (400 V). The 2.2 mΩ RDS(on) minimizes losses at the 100+ A currents typical of residential storage systems, while the AEC-Q101 automotive-grade reliability (a common de-facto standard for ESS designs) ensures long operational life under thermal cycling. Pair with a digital controller such as the TLD5097EPXUMA1 for maximum power point tracking (MPPT) and battery charging profile management.
Recommended
Recommended Products Summary
Engineering reference data for IAUC120N06S5N022ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC120N06S5L022ATMA1 | IAUC120N04S6N009ATMA1 | IAUC120N04S6N010ATMA1 | IAUC60N10S5L110ATMA1 | NTMFS5C612N |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TDSON-8-34 (TDSON EP 5x6) | PG-TDSON-8-34 (TDSON EP 5x6) | PG-TDSON-8-34 (TDSON EP 5x6) | PG-TDSON-8-34 (TDSON EP 5x6) | PG-TDSON-8-34 (TDSON EP 5x6) | PQFN-8 (5x6) EP equivalent |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 40 V | 40 V | 100 V | 60 V |
| On-Resistance RDS(on) max | 2.2 mΩ @ VGS=10V | 2.2 mΩ | 0.9 mΩ | 1.0 mΩ | 11 mΩ | 1.8 mΩ |
| VGS Threshold Type | Standard level | Logic level | Standard level | Standard level | Logic level | Standard level |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
| Technology | OptiMOS-5 | OptiMOS-5 | OptiMOS | OptiMOS | OptiMOS-5 | onsemi Shielded Gate MOSFET |
Key Differentiators
- Ultra-low RDS(on) of 2.2 mΩ at 60 V VDS in compact 5x6 mm TDSON (vs IAUC120N04S6N009ATMA1)
- OptiMOS-5 technology with optimized FOM (vs NTMFS5C612N (onsemi))
- Logic-level VGS threshold variant available in same package (vs IAUC120N06S5L022ATMA1)
Design Notes
At ID=120A continuous and RDS(on)=2.2 mΩ, conduction loss alone is P=I²R = (120)² × 0.0022 = 31.7 W. Switching loss adds 5-15 W at 100-300 kHz depending on topology. The PG-TDSON-8-34 package datasheet specifies a junction-to-case thermal resistance theta_JC around 0.5-1.0 C/W; however junction-to-ambient theta_JA is approximately 50 C/W on a standard 2 oz JEDEC test board. To stay below TJmax=175C in automotive-grade designs, a copper pour of at least 25x25 mm on top and bottom PCB layers connected by thermal vias is essential. Always derate to TJmax=150C for long-term reliability margin.
The exposed drain pad on pin 8 (bottom) must be soldered to a copper land pattern with at least 8 thermal vias (0.3 mm drill, 0.6 mm pitch) connecting to inner and bottom PCB copper planes. Source pins (2-7) should be tied together with wide copper traces on the top layer to minimize parasitic source inductance that would otherwise slow switching and cause gate-drive ringing. Per Infineon layout guidelines, keep the gate-drive loop (gate resistor to gate pin to source pin) under 10 mm total length to limit parasitic inductance below 5 nH.
Do not operate the IAUC120N06S5N022ATMA1 above 60 V VDS even transiently - avalanche breakdown will permanently damage the device. Ensure VGS never exceeds the absolute maximum rating (typically ±20 V); use a gate-source Zener clamp or dedicated driver IC to prevent dv/dt-induced gate overvoltage during turn-off. The standard-level VGS threshold requires a true 10 V gate supply; using 5 V logic drive will leave the FET in the linear region and cause severe overheating.
Place the gate-driver IC within 10 mm of the gate pin to minimize gate-loop inductance. Use a separate gate-drive return trace directly from the driver ground to the FET source pin, avoiding shared ground paths with high-current source returns. A 10 ohm gate resistor (placed close to the driver) helps dampen ringing; for paralleled FET configurations, individual gate resistors prevent oscillation. Isolate the switching node (drain) from sensitive analog ground using a guard ring on the PCB.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon product family. RoHS compliant and halogen-free per Infineon OptiMOS-5 family convention. Note: AEC-Q101 (discrete semiconductors) is the correct qualification standard for this MOSFET - AEC-Q100 applies to ICs.
