IAUC60N04S6L030HATMA1 vs IAUC120N06S5N022ATMA1 Comparison

Detailed side-by-side comparison of IAUC60N04S6L030HATMA1 by Infineon and IAUC120N06S5N022ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 βœ“ Active
Infineon
IAUC120N06S5N022ATMA1 IAUC120N06S5N022ATMA1 - 60V, 2.2mΞ© OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N022ATMA1 - 60V, 2.2mΞ© OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N022ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC60N04S6L030HATMA1 IAUC120N06S5N022ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.94 $1.68
Manufacturer Infineon Technologies β€”
Part Series OptiMOS 6 β€”
Configuration Half-Bridge (2 N-Channel) β€”
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID) at TJ 60 A β€”
On-Resistance R_DS(on) at VGS=10V 3.0 mOhm (typical) β€”
Total Gate Charge (Qg) at VGS=10V 35 nC β€”
Output Capacitance (Coss) 2.128 nF β€”
Reverse Transfer Capacitance (Crss) 596 pF β€”
Gate Threshold Voltage (VGS(th)) 2 V β€”
Maximum Power Dissipation (PD) at TC 75 W β€”
Operating Junction Temperature -55 C to +175 C β€”
Package PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) PG-TDSON-8-34 (TDSON EP 5x6)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per part number suffix) AEC-Q101
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) β€”
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) β€” 170 A (Tj)
On-Resistance RDS(on) max β€” 2.2 mΞ© at VGS=10 V
Power Dissipation (PD) β€” 136 W (Tc)
Operating Temperature Range β€” [DATA_NEEDED: TJ min/max]
Technology β€” OptiMOS-5 trench
Channel Type β€” N-Channel
Pin Count β€” 8 (with exposed pad)
Halogen-Free β€” Yes (per Infineon product family convention)
Total Gate Charge (Qg) β€” [DATA_NEEDED: typical Qg]
RDS(on) at VGS=4.5V β€” [DATA_NEEDED: RDS(on) @4.5V]

Datasheets & Resources

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