IAUC60N04S6L039ATMA1 vs BSC032N04LSATMA1 Comparison

Detailed side-by-side comparison of IAUC60N04S6L039ATMA1 by Infineon and BSC032N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC60N04S6L039ATMA1

IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 βœ“ Active
Infineon
BSC032N04LSATMA1

BSC032N04LSATMA1 - 40V 3.2mΞ© OptiMOS 5 N-MOSFET | Infineon

BSC032N04LSATMA1 βœ“ Active

Specification Comparison

Parameter IAUC60N04S6L039ATMA1 BSC032N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.72 $0.32
FET Type N-Channel N-Channel
Technology OptiMOS 6 (trench) OptiMOS 5 trench
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current (I_D, T_C=25C) 60 A β€”
Pulsed Drain Current (I_DM) 240 A β€”
R_DS(on) max @ V_GS=10V 3.9 milliohm β€”
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Q_G) [DATA_NEEDED: total gate charge] β€”
Power Dissipation (P_D) 42 W β€”
Operating Junction Temperature -55C to +175C -55Β°C to +175Β°C
Package PG-TDSON-8 (SSO8) 5x6 mm PG-TDSON-8-6 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) β€”
Automotive Qualification AEC-Q101 qualified β€”
RoHS Status Compliant Compliant
Avalanche Rated Yes (100% avalanche tested) β€”
Manufacturer β€” Infineon Technologies
Part Series β€” OptiMOS 5 40V
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at Ta=25Β°C β€” 21 A
Continuous Drain Current (ID) at Tc=25Β°C β€” 98 A
RDS(on) max at VGS=10V β€” 3.2 mΞ©
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 52 W
Gate-Source Voltage (VGS) β€” Β±20 V
Lead-Free β€” Yes

Datasheets & Resources

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