IAUC60N04S6L039ATMA1 vs IPG20N10S436AATMA1 Comparison

Detailed side-by-side comparison of IAUC60N04S6L039ATMA1 by Infineon and IPG20N10S436AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC60N04S6L039ATMA1

IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 βœ“ Active
Infineon
IPG20N10S436AATMA1 IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 βœ“ Active

Specification Comparison

Parameter IAUC60N04S6L039ATMA1 IPG20N10S436AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.72 $0.68
FET Type N-Channel β€”
Technology OptiMOS 6 (trench) β€”
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current (I_D, T_C=25C) 60 A β€”
Pulsed Drain Current (I_DM) 240 A β€”
R_DS(on) max @ V_GS=10V 3.9 milliohm β€”
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Q_G) [DATA_NEEDED: total gate charge] β€”
Power Dissipation (P_D) 42 W β€”
Operating Junction Temperature -55C to +175C β€”
Package PG-TDSON-8 (SSO8) 5x6 mm PG-TDSON-8-10 (Wettable Flank)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) MSL1 (260 C peak reflow)
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Status Compliant Compliant (Green Product)
Avalanche Rated Yes (100% avalanche tested) β€”
Configuration β€” Dual N-Channel (2 Elements with Built-in Diode)
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) β€” 20 A (per channel)
Total Power Dissipation (PD) β€” 43 W
Operating Mode β€” Enhancement Mode
Operating Temperature (TJ max) β€” +175 C
JESD-609 Code β€” e3
Avalanche Tested β€” 100%
AOI Compatible β€” Yes (Wettable Flank)
Channel Type β€” N-Channel Normal Level

Datasheets & Resources

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