IAUC60N04S6N044ATMA1 vs IAUCN04S6N009TATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6N044ATMA1 by Infineon and IAUCN04S6N009TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveInfineon
IAUCN04S6N009TATMA1 - 40V 0.9mΞ© OptiMOS 6 Auto MOSFET | Infineon
IAUCN04S6N009TATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6N044ATMA1 | IAUCN04S6N009TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $1.71 |
| Technology | OptiMOS-6 N-channel trench MOSFET | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | β |
| Continuous Drain Current (I_D) at Tc=25Β°C | 60 A | β |
| Continuous Drain Current (I_D) at Tc=100Β°C | [DATA_NEEDED: pulsed/current derated value] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΞ© | β |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | β |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | β |
| Power Dissipation (P_D) at Tc=25Β°C | 42 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8 (5x6 mm) with exposed pad | PG-LHDSO-10-2 (SSO10T) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | β |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | AEC-Q101 |
| RoHS Status | Compliant | β |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 6 40 V |
| Part Number | β | IAUCN04S6N009T |
| Ordering Code (MPN) | β | IAUCN04S6N009TATMA1 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, at Tj) | β | 330 A |
| Power Dissipation (PD, at Tc) | β | 178 W |
| On-Resistance RDS(on) max | β | 0.9 mΞ© |
| Lead-Free / RoHS | β | Yes / Compliant |
| Gate Threshold VGS(th) typ | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: total gate charge] |