IAUCN04S6N009TATMA1 - 40V 0.9mΩ OptiMOS 6 Auto MOSFET | Infineon
MPN: IAUCN04S6N009TATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.05 | $30.50 |
| 100 | $2.58 | $258.00 |
| 500 | $2.21 | $1,105.00 |
| 1,000 | $1.94 | $1,940.00 |
| 3,000 | $1.71 | $5,130.00 |
IAUCN04S6N009TATMA1 Overview
An automotive power MOSFET is a key building block in modern vehicle electrical systems. In the broader power-conversion hierarchy it sits below high-level load switches and DC-DC converters, and is the discrete switching element that connects batteries, alternators, and DC bus rails to electronic control units (ECUs). OptiMOS is Infineon's brand name for its 30 V to 300 V N-channel MOSFET family, optimized for low RDS(on) per unit silicon area and high avalanche ruggedness.
Key features include the 0.9 mΩ maximum RDS(on) at VGS = 10 V, a logic-level compatible gate threshold, and an SSDG (single-sided dual-gate) source-connected leadframe that maximizes PCB copper utilization. The part is qualified to AEC-Q101 for automotive reliability and supports lead-free reflow at 260 °C peak per JEDEC J-STD-020. Its low Qg and Qgd figures enable efficient switching at frequencies up to several hundred kHz in synchronous rectification stages.
The MOSFET uses Infineon's advanced trench-cell architecture with a high cell density to minimize on-state losses while maintaining strong SOA. The exposed source-down metal pad provides a direct thermal path to the PCB, achieving very low thermal resistance and enabling high continuous current in compact layouts. This combination of low RDS(on) and excellent thermal performance reduces the need for paralleling devices, simplifying both the BOM and the gate-driver design.
Typical applications include 12 V/24 V automotive e-fuse and battery protection, high-current DC-DC buck and synchronous rectifier stages, electric power steering (EPS), braking and chassis ECUs, and high-side/half-bridge motor drivers. The part's small SSO10T footprint also makes it attractive for e-bike and light-mobility powertrains where board area is constrained.
When designing with this device, place the source pad on a continuous copper pour connected by multiple thermal vias to the inner PCB layers. Always observe the maximum junction temperature of 175 °C and ensure that VGS is driven cleanly above 10 V to fully enhance the channel and realize the specified 0.9 mΩ.
This page synthesizes distributor pricing, drop-in alternatives, and practical PCB layout notes not found in the manufacturer datasheet, giving engineers a faster path from selection to validated BOM.
Drop-in alternatives for IAUCN04S6N009TATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN04S6N009TATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, MSL Level, Packaging.
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IAUCN04S7N009ATMA1
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View Datasheet →IAUCN04S6N009TATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 40 V |
| Part Number | IAUCN04S6N009T |
| Ordering Code (MPN) | IAUCN04S6N009TATMA1 |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, at Tj) | 330 A |
| Power Dissipation (PD, at Tc) | 178 W |
| On-Resistance RDS(on) max | 0.9 mΩ |
| Package | PG-LHDSO-10-2 (SSO10T) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET |
| Automotive Qualification | AEC-Q101 |
| Lead-Free / RoHS | Yes / Compliant |
IAUCN04S6N009TATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input (logic-level compatible) |
| Pin 2 | SOURCE — Source connection (also bonded to exposed pad) |
| Pin 3 | SOURCE — Source connection (also bonded to exposed pad) |
| Pin 4 | SOURCE — Source connection (also bonded to exposed pad) |
| Pin 5 | SOURCE — Source connection (also bonded to exposed pad) |
| Pin 6 | SOURCE — Source connection (also bonded to exposed pad) |
| Pin 7 | DRAIN — Drain connection |
| Pin 8 | DRAIN — Drain connection |
| Pin 9 | DRAIN — Drain connection |
| Pin 10 | DRAIN — Drain connection |
Safe Operating Area (DC)
Typical Applications
IAUCN04S6N009TATMA1 is suitable for 6 applications: 12 V Automotive e-Fuse and Battery Protection, 24 V Truck and Commercial Vehicle Load Switch, Synchronous Rectifier in 12 V Buck DC-DC Converters, Electric Power Steering (EPS) and Braking ECU, E-Bike and Light-Mobility Powertrain, Hot-Swap and ORing Controller in Industrial 24 V Systems.
12 V Automotive e-Fuse and Battery Protection
The IAUCN04S6N009TATMA1 fits 12 V e-fuse designs because its 0.9 mΩ RDS(on) at VGS = 10 V and 330 A continuous drain current handle the high inrush currents seen during battery hot-plug and load-dump transients without exceeding safe operating area. With 40 V VDS it tolerates 12 V jump-start spikes up to ~24 V and load-dump transients beyond 35 V when paired with a TVS clamp. The SSO10T source-down package bonds the source pad to the PCB copper pour, giving very low junction-to-ambient thermal resistance and enabling the e-fuse to clear 1000 A short-circuit pulses at 25 °C board temperature.
Recommended
24 V Truck and Commercial Vehicle Load Switch
In 24 V truck electrical systems, the IAUCN04S6N009TATMA1 acts as a low-loss high-side or low-side load switch thanks to its 40 V VDS rating, which provides comfortable headroom for 24 V nominal rail plus transient doubling. Its 0.9 mΩ RDS(on) keeps conduction loss below 1 W at 30 A continuous, simplifying thermal design for body-control modules and chassis ECUs. The AEC-Q101 qualification allows direct deployment under the hood or in cabin-mounted ECU boxes, and the SSO10T footprint matches existing 24 V Infineon reference designs, enabling reuse across truck platform variants.
Recommended
Synchronous Rectifier in 12 V Buck DC-DC Converters
The IAUCN04S6N009TATMA1 is well suited to the low-side synchronous rectifier position in 12 V buck converters up to ~50 A continuous, where its 0.9 mΩ RDS(on) and low Qgd deliver both low conduction loss and clean switching transitions at 200-400 kHz. Its 40 V VDS is far above the 12 V rail, ensuring robustness against ringing on the switch node when paired with a 100 V Schottky or 40 V MOSFET on the high side. Designers can run the device without active snubbers in most cases, simplifying the BOM for automotive point-of-load regulators.
Recommended
Electric Power Steering (EPS) and Braking ECU
EPS motor drives and electronic stability control units demand MOSFETs that combine high peak current capability with low conduction loss for the cold-cranking and dynamic-braking phases. The IAUCN04S6N009TATMA1's 330 A continuous drain current rating and 178 W power dissipation envelope give EPS inverter designers ample SOA margin for short-term torque peaks. The 40 V VDS comfortably covers 12 V cold-crank dips down to 6 V and 24 V truck crank scenarios, while the OptiMOS 6 cell design reduces body-diode recovery loss during synchronous freewheeling.
Recommended
E-Bike and Light-Mobility Powertrain
E-bike controller designs benefit from the IAUCN04S6N009TATMA1's high power density in the compact SSO10T package, which allows 25-40 A peak phase currents to be delivered from a footprint smaller than a DPAK. Its 40 V VDS easily covers 36 V and 48 V battery packs with margin for back-EMF spikes during regenerative braking. Combined with an external gate driver and small heatsink copper pour, the device enables efficient, lightweight motor-drive PCBs for pedal-assist and small-scooter applications without sacrificing thermal margin.
Recommended
Hot-Swap and ORing Controller in Industrial 24 V Systems
The IAUCN04S6N009TATMA1 serves as the pass element in 24 V industrial hot-swap and ORing controllers, where its 0.9 mΩ RDS(on) keeps voltage drop below 50 mV at 50 A continuous load - critical for telecom and industrial battery-backup plants. Its 40 V VDS handles inrush transients and ringing on long input cables, while the exposed source pad provides the thermal mass to absorb 1000 A inrush events for tens of milliseconds. The AEC-Q101 grade also makes it acceptable for industrial-grade equipment that demands higher reliability than consumer MOSFETs.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S6N009TATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N009ATMA1 | IAUC100N04S6L020ATMA1 | IAUC100N04S6L014ATMA1 | IAUC60N04S6N044ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SSO10T (PG-LHDSO-10-2) | SSO10T (PG-LHDSO-10-2) - same | SSO10T (PG-LHDSO-10-2) - same | SSO10T (PG-LHDSO-10-2) - same | SSO10T (PG-LHDSO-10-2) - same | SSO10T (PG-LHDSO-10-2) - same |
| VDS (V) | 40 | 40 | 40 | 40 | 40 | 30 |
| RDS(on) max (mΩ) | 0.9 | 0.9 | 2.0 | 1.4 | 4.4 | 1.1 |
| Technology | OptiMOS 6 | OptiMOS 7 | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
Key Differentiators
- Lowest on-resistance in Infineon SSO10T 40 V OptiMOS 6 family (vs IAUC100N04S6L020ATMA1)
- 40 V VDS optimizes 12 V/24 V automotive margin without oversizing (vs ISC080N10NM6ATMA1)
- OptiMOS 6 trench generation improves switching loss vs OptiMOS 5 (vs ISC011N03L5SATMA1)
Design Notes
Estimated: at 50 A continuous and RDS(on) = 0.9 mΩ, conduction loss is 50 A² × 0.9 mΩ = 2.25 W. With SSO10T theta_JA around 40-50 C/W on a 1 oz 4-layer board with 1 square inch of source copper pour, junction temperature rises roughly 90-110 C above ambient. For 100 A continuous, doubling to ~180 C rise demands larger copper area or forced air. Always validate with thermocouples on the source pad, not just the package top, because the source-down leadframe transfers most heat to the PCB.
Place a continuous top-layer copper pour directly under the SSO10T source pad, sized to at least 1 square inch (≈ 645 mm²) and stitched to inner layers with multiple thermal vias (0.3 mm drill, 0.6 mm pitch, filled or capped to reduce voiding). Gate-trace width should be at least 0.5 mm and kept short to minimize gate-loop inductance, since the source-down leadframe creates a small common-source inductance that can ring during fast switching. Keep the gate driver within 10 mm of pin 1 to avoid false triggering.
Do not connect the source pad to a small copper island - the SSO10T derives most of its thermal performance from a wide, uninterrupted pour. Avoid placing vias in the gate pad area, as solder wicking can lift the gate pad during reflow and create a weak gate connection. For load-dump-protected automotive designs, verify that the 40 V VDS is never exceeded by transients; a 30 V or 36 V TVS on the drain is recommended. Never parallel different MOSFET SKUs (e.g. 0.9 mΩ with 4.4 mΩ) - current sharing becomes unstable and one device overheats.
Compliance Information
AEC-Q101 (automotive discrete) qualified per Infineon product page. RoHS and REACH compliant. Halogen-free per JEDEC JS709B. Conflict-mineral statement available from Infineon.
