IAUC60N10S5L110ATMA1 vs IAUCN04S7N015GATMA1 Comparison

Detailed side-by-side comparison of IAUC60N10S5L110ATMA1 by Infineon and IAUCN04S7N015GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC60N10S5L110ATMA1

IAUC60N10S5L110ATMA1 - 100V 11mΞ© N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 βœ“ Active
Infineon
IAUCN04S7N015GATMA1

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 βœ“ Active

Specification Comparison

Parameter IAUC60N10S5L110ATMA1 IAUCN04S7N015GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $2.21
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOSβ„’-5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (V<sub>DS</sub>) 100 V β€”
Continuous Drain Current (I<sub>D</sub>, Tc) 60 A β€”
Power Dissipation (P<sub>D</sub>, Tc) 88 W β€”
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V 11 mΞ© β€”
Gate Threshold Voltage (V<sub>GS(th)</sub>) 1.2 V β€”
Package PG-TDSON-8-33 (TDSON-8 Single) PG-THSOG-4-1 (SSO4G 5x6) surface mount
Mounting Type Surface Mount Surface Mount (IMS-compatible source-down)
Operating Temperature Range [DATA_NEEDED: min/max operating temperature] β€”
Gate-Source Voltage (V<sub>GS</sub>) Max [DATA_NEEDED: VGS max rating] β€”
Total Gate Charge (Q<sub>G</sub>) [DATA_NEEDED: Qg at specified Vgs] β€”
Avalanche Energy (E<sub>AS</sub>) [DATA_NEEDED: single-pulse avalanche energy] β€”
Lead-Free / RoHS Yes (RoHS compliant per LCSC listing) β€”
Packing Code ATMA1 (Tape & Reel) β€”
MSL Level 1 (per LCSC datasheet snippet) 1 (per JEDEC J-STD-020)
Halogen-Free Yes (per Infineon product classification) β€”
Customer Info / FGR J52 (per Infineon product data) β€”
Product Family β€” OptiMOS 7
Channel Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 40 V
Continuous Drain Current (I_D) β€” 165 A (Tc)
Power Dissipation (P_D) β€” 96 W (Tc)
R_DS(on) max β€” 1.53 mΞ© at V_GS=10 V
Gate-Source Voltage (V_GS) max β€” [DATA_NEEDED: V_GS max]
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th) typical]
Operating Junction Temperature β€” -55C to +175C
Automotive Qualification β€” AEC-Q101 qualified
Total Gate Charge (Q_G) β€” [DATA_NEEDED: total gate charge]
RoHS Status β€” Compliant

Datasheets & Resources

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