IAUCN04S6N009TATMA1 vs IAUC60N04S6N044ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S6N009TATMA1 by Infineon and IAUC60N04S6N044ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S6N009TATMA1
IAUCN04S6N009TATMA1 - 40V 0.9mΞ© OptiMOS 6 Auto MOSFET | Infineon
IAUCN04S6N009TATMA1 β ActiveInfineon
IAUC60N04S6N044ATMA1
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S6N009TATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.71 | $0.98 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 6 40 V | β |
| Part Number | IAUCN04S6N009T | β |
| Ordering Code (MPN) | IAUCN04S6N009TATMA1 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, at Tj) | 330 A | β |
| Power Dissipation (PD, at Tc) | 178 W | β |
| On-Resistance RDS(on) max | 0.9 mΞ© | β |
| Package | PG-LHDSO-10-2 (SSO10T) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS-6 N-channel trench MOSFET |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified (IAUC prefix) |
| Lead-Free / RoHS | Yes / Compliant | β |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | β |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25Β°C | β | 60 A |
| Continuous Drain Current (I_D) at Tc=100Β°C | β | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | β | 4.4 mΞ© |
| On-Resistance R_DS(on) max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25Β°C | β | 42 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| MSL Level | β | 1 (unlimited) |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen-free status] |