IAUCN04S6N009TATMA1 vs IAUCN04S7N006ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S6N009TATMA1 by Infineon and IAUCN04S7N006ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S6N009TATMA1

IAUCN04S6N009TATMA1 - 40V 0.9mΞ© OptiMOS 6 Auto MOSFET | Infineon

IAUCN04S6N009TATMA1 βœ“ Active
Infineon
IAUCN04S7N006ATMA1

IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon

IAUCN04S7N006ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S6N009TATMA1 IAUCN04S7N006ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.71 $0.95
Manufacturer Infineon Technologies β€”
Part Family OptiMOS 6 40 V β€”
Part Number IAUCN04S6N009T β€”
Ordering Code (MPN) IAUCN04S6N009TATMA1 β€”
Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, at Tj) 330 A β€”
Power Dissipation (PD, at Tc) 178 W β€”
On-Resistance RDS(on) max 0.9 mΞ© β€”
Package PG-LHDSO-10-2 (SSO10T) PG-TDSON-8-43
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 6 trench MOSFET OptiMOS 5 (trench)
Automotive Qualification AEC-Q101 AEC-Q101
Lead-Free / RoHS Yes / Compliant Yes (compliant)
Gate Threshold VGS(th) typ [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge Qg typ [DATA_NEEDED: total gate charge] β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) β€” 175 A
On-State Resistance (RDS(on)) β€” 0.63 mOhm (typ at VGS = 10 V)
Gate-Source Voltage (VGS) Max β€” [DATA_NEEDED: VGS max rating]
Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Operating Temperature Range β€” -55 C to +175 C
Junction Temperature Max β€” 175 C
Power Dissipation Max (Pd) β€” [DATA_NEEDED: Pd max]
Gate Charge Total (Qg) β€” [DATA_NEEDED: Qg total]
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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