IAUCN04S7L019ATMA1 vs BSC040N10NS5ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L019ATMA1 by Infineon and BSC040N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L019ATMA1 - 40V 1.91mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L019ATMA1 β ActiveInfineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L019ATMA1 | BSC040N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.93 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ 7 | β |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 120 A | β |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical/max value] | β |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: Qg total/nominal value] | β |
| Package | PG-TDSON-8-33 | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55Β°C to +175Β°C (junction) | β |
| Power Dissipation (P<sub>D</sub>) | [DATA_NEEDED: Pd max at 25C] | β |
| Thermal Resistance Junction-to-Ambient | [DATA_NEEDED: RthJA value] | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per Infineon OptiMOS 5 family) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Packaging | Tape & Reel (13-inch reel) | β |
| Standard Pack Quantity | 5000 pieces | β |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") | β |
| Technology | β | OptiMOS 5 |
| Drain-Source Voltage (VDS) | β | 100 V |
| Maximum On-Resistance (RDS(on)) | β | 4 mOhm |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) max | β | 136 A |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 139 W |
| Operating Temperature Range | β | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Output Capacitance Reduction | β | Up to 44% vs previous generation |
| RDS(on) Reduction | β | Up to 43% vs previous generation |