IAUCN04S7L019ATMA1 vs BSC059N04LS6ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L019ATMA1 by Infineon and BSC059N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L019ATMA1 - 40V 1.91mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L019ATMA1 β Active
Specification Comparison
| Parameter | IAUCN04S7L019ATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.74 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ 7 | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 120 A | β |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical/max value] | β |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: Qg total/nominal value] | β |
| Package | PG-TDSON-8-33 | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55Β°C to +175Β°C (junction) | β |
| Power Dissipation (P<sub>D</sub>) | [DATA_NEEDED: Pd max at 25C] | β |
| Thermal Resistance Junction-to-Ambient | [DATA_NEEDED: RthJA value] | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Packaging | Tape & Reel (13-inch reel) | β |
| Standard Pack Quantity | 5000 pieces | β |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") | β |
| Technology | β | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25C | β | 17 A |
| Continuous Drain Current (ID) at TC=25C | β | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | β | 59 A |
| On-Resistance RDS(on) max | β | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | β | 3 W |
| Total Power Dissipation at TC=25C | β | 38 W |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Operating Temperature Range | β | -55C to +150C |
| Diode Continuous Forward Current (IS) | β | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | β | 236 A at TC=25C |
| Lead-Free | β | Yes |