IAUCN04S7L019ATMA1 vs IAUC120N04S6L009ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L019ATMA1 by Infineon and IAUC120N04S6L009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L019ATMA1 - 40V 1.91mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L019ATMA1 β ActiveInfineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΞ© 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L019ATMA1 | IAUC120N04S6L009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 7 | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 120 A | β |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical/max value] | β |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: Qg total/nominal value] | β |
| Package | PG-TDSON-8-33 | PG-TDSON-8-34 (5x6 mm leadless, SS08) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55Β°C to +175Β°C (junction) | β |
| Power Dissipation (P<sub>D</sub>) | [DATA_NEEDED: Pd max at 25C] | β |
| Thermal Resistance Junction-to-Ambient | [DATA_NEEDED: RthJA value] | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (13-inch reel) | β |
| Standard Pack Quantity | 5000 pieces | β |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") | β |
| Product Family | β | OptiMOS-6 40V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 150 A (per datasheet header) |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100Β°C) | β | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>DM</sub>) | β | [DATA_NEEDED: pulsed I_DM] |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | β | 0.9 mΞ© |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | β | [DATA_NEEDED: VGS(th) typ/range] |
| Gate Charge Q<sub>g</sub> | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25Β°C) | β | 150 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Pin Count | β | 8 |
| AEC-Q101 Automotive Qualification | β | Yes |
| Avalanche Energy E<sub>AS</sub> | β | [DATA_NEEDED: single-pulse avalanche energy] |