IAUCN04S7N009ATMA1 vs IAUCN04S6N009TATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N009ATMA1 by Infineon and IAUCN04S6N009TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N009ATMA1

IAUCN04S7N009ATMA1 - 40V 0.96mΞ© 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 βœ“ Active
Infineon
IAUCN04S6N009TATMA1

IAUCN04S6N009TATMA1 - 40V 0.9mΞ© OptiMOS 6 Auto MOSFET | Infineon

IAUCN04S6N009TATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N009ATMA1 IAUCN04S6N009TATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.71
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) OptiMOS 6 trench MOSFET
Drain-to-Source Voltage (V_DSS) 40 V β€”
Continuous Drain Current (I_D) 175 A β€”
R_DS(on) Max @ V_GS = 10 V 0.96 mΞ© β€”
Gate Drive Voltage (V_GS) 10 V β€”
Package PG-TDSON-8-34 (Surface Mount) PG-LHDSO-10-2 (SSO10T)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
Qualification AEC-Q101 (Automotive) β€”
MSL Level 1 β€”
RoHS Status Compliant β€”
Configuration Single N-Channel β€”
Supplier Device Package PG-TDSON-8-34 β€”
Part Family β€” OptiMOS 6 40 V
Part Number β€” IAUCN04S6N009T
Ordering Code (MPN) β€” IAUCN04S6N009TATMA1
Channel Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID, at Tj) β€” 330 A
Power Dissipation (PD, at Tc) β€” 178 W
On-Resistance RDS(on) max β€” 0.9 mΞ©
Automotive Qualification β€” AEC-Q101
Lead-Free / RoHS β€” Yes / Compliant
Gate Threshold VGS(th) typ β€” [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ β€” [DATA_NEEDED: total gate charge]

Datasheets & Resources

Browse All Products Create BOM Request Quote