IAUCN04S7N015GATMA1 vs IAUCN04S7L028ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N015GATMA1 by Infineon and IAUCN04S7L028ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N015GATMA1
IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
IAUCN04S7N015GATMA1 β ActiveInfineon
IAUCN04S7L028ATMA1
IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L028ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N015GATMA1 | IAUCN04S7L028ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.21 | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D) | 165 A (Tc) | β |
| Power Dissipation (P_D) | 96 W (Tc) | β |
| R_DS(on) max | 1.53 mΞ© at V_GS=10 V | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| Package | PG-THSOG-4-1 (SSO4G 5x6) surface mount | PG-TDSON-8-33 (TDSON-8 EP) |
| Operating Junction Temperature | -55C to +175C | -55 C to +175 C |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | β |
| RoHS Status | Compliant | Compliant |
| Mounting Type | Surface Mount (IMS-compatible source-down) | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Series | β | OptiMOS 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) | β | 100 A |
| On-State Resistance (RDS(on)) max | β | 2.80 mOhm at VGS=10 V |
| On-State Resistance (RDS(on)) | β | 2.82 mOhm at VGS=10 V (JLCPCB reported) |
| Gate-Source Threshold (VGS(th)) | β | 1.8 V (typ) |
| Gate Charge (Qg) | β | 24 nC at VGS=10 V |
| Input Capacitance (Ciss) | β | 1.578 nF |
| Output Capacitance (Coss) | β | 788 pF |
| Reverse Transfer Capacitance (Crss) | β | 36 pF |
| Power Dissipation (Ptot) | β | 58 W |