IAUCN04S7N015GATMA1 vs IAUCN04S7L042GATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N015GATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N015GATMA1

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 βœ“ Active
Infineon
IAUCN04S7L042GATMA1

IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon

IAUCN04S7L042GATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N015GATMA1 IAUCN04S7L042GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.21 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7 40V
Channel Type N-Channel β€”
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current (I_D) 165 A (Tc) β€”
Power Dissipation (P_D) 96 W (Tc) β€”
R_DS(on) max 1.53 mΞ© at V_GS=10 V β€”
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max] β€”
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] β€”
Package PG-THSOG-4-1 (SSO4G 5x6) surface mount PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Operating Junction Temperature -55C to +175C β€”
Automotive Qualification AEC-Q101 qualified β€”
Total Gate Charge (Q_G) [DATA_NEEDED: total gate charge] β€”
RoHS Status Compliant Compliant
Mounting Type Surface Mount (IMS-compatible source-down) Surface Mount (IMS substrate / FR4 with thermal vias)
MSL Level 1 (per JEDEC J-STD-020) 1
Technology β€” Trench N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID, Tj) β€” 77 A
Maximum Power Dissipation (PD, Tc) β€” 50 W
Operating Temperature Range β€” -55C to +175C (Tj)
Polarity / Channel Type β€” N-Channel enhancement mode
Automotive Qualified β€” Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing β€” Tape & Reel (per -ATMA1 suffix)
Target Substrate β€” IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) β€” [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg β€” [DATA_NEEDED: Qg @ VGS=10V]

Datasheets & Resources

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