IAUCN04S7N015GATMA1 vs IAUCN04S7N027GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N015GATMA1 by Infineon and IAUCN04S7N027GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N015GATMA1
IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
IAUCN04S7N015GATMA1 β ActiveInfineon
IAUCN04S7N027GATMA1
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N015GATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.21 | $0.72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 |
| Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D) | 165 A (Tc) | β |
| Power Dissipation (P_D) | 96 W (Tc) | β |
| R_DS(on) max | 1.53 mΞ© at V_GS=10 V | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| Package | PG-THSOG-4-1 (SSO4G 5x6) surface mount | β |
| Operating Junction Temperature | -55C to +175C | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | β |
| RoHS Status | Compliant | Compliant |
| Mounting Type | Surface Mount (IMS-compatible source-down) | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL] |
| Drain-Source Voltage (Vds max) | β | 40 V |
| Continuous Drain Current (Id) | β | 117 A |
| On-Resistance (Rds(on) max) | β | 2.67 mOhm |
| Power Dissipation (Pd) | β | 70 W (Tc) |
| Package / Case | β | PG-THSOG-4-1 (SSO4G 5x6) |
| Qualification | β | Automotive |
| Operating Temperature Range | β | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Substrate Compatibility | β | IMS substrates and legacy FR-4 |