IAUCN08S7L033ATMA1 vs BSZ0904NSIATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L033ATMA1 by Infineon and BSZ0904NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β Active
Specification Comparison
| Parameter | IAUCN08S7L033ATMA1 | BSZ0904NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Series | Automotive OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΞ© | β |
| Continuous Drain Current (ID) at Tj | 130 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | [DATA_NEEDED: ID at Tc=25C] | β |
| Power Dissipation (PD) at Tc=25Β°C | 118 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th)] |
| Gate-Source Voltage (VGS) max | Β±20 V (typical Infineon OptiMOS 7 limit) | [DATA_NEEDED: VGS max rating] |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | -55C to +150C |
| Package | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) | PG-TSDSON-8-FL (PQFN 3.3x3.3) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | JEDEC qualified for target applications |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS (N-channel power MOSFET) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, typical for this package) | β |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 18 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| On-State Resistance RDS(on) max at VGS=4.5V | β | 4 mOhm |
| On-State Resistance RDS(on) max at VGS=10V | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Power Dissipation at Ta | β | 2.1 W |
| Power Dissipation at Tc | β | 37 W |
| Integrated Schottky-like Diode | β | Yes (monolithic) |
| Avalanche Rated | β | 100% avalanche tested |
| Lead Plating | β | Pb-free |
| Halogen-Free | β | Yes |