BSZ0904NSIATMA1 - 30V 40A OptiMOS N-FET SyncFET | Infineon
MPN: BSZ0904NSIATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.05 | $10.50 |
| 100 | $0.87 | $87.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.62 | $620.00 |
| 3,000 | $0.49 | $1,470.00 |
BSZ0904NSIATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplification. OptiMOS is Infineon's power MOSFET technology family targeting high-frequency, high-efficiency DC-DC conversion. SyncFETs are specifically designed low-side MOSFETs used in synchronous buck topologies, where their low Qg and integrated Schottky-like diode minimize switching losses and body-diode reverse-recovery losses. Within the power-semiconductor taxonomy, this places the part under: power MOSFET -> N-channel MOSFET -> OptiMOS 30V family -> discrete semiconductor.
Differentiating features include the integrated monolithic Schottky-like diode that suppresses body-diode conduction and reduces dead-time losses, very low RDS(on) of 4 mΩ max at 4.5 V drive, 100% avalanche-tested ruggedness, JEDEC-qualified for target applications, Pb-free lead plating, RoHS compliance, and halogen-free molding compound. The 8x8 mm land pattern of the PG-TSDSON-8-FL gives a 3.3x3.3 mm body with a large exposed thermal pad enabling superior RthJC of typically 1.5 C/W.
Typical applications include voltage regulator solutions in servers, datacom, telecom, and high-current point-of-load converters where OptiMOS 30V offers the lowest on-state resistance in small-footprint packages. The Infineon datasheet positions the part for demanding high-frequency buck converters where switching losses dominate. When designing with this device, prioritize a 4.5 V gate drive when possible to take full advantage of the lowest RDS(on), and place the gate-driver loop within a few millimeters to minimize parasitic inductance and ringing on the gate node. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for BSZ0904NSIATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSZ0904NSIATMA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, Technology, Continuous Drain Current (ID) at Ta=25C, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSZ0904NSI
✅ Drop-In📋 Reference alternative (not in catalog)
BSZ0901NSIATMA1
✅ Drop-In✓ In Stock
$0.34 / Unit
View Datasheet →BSZ0901NSIATMA1
✅ Drop-In✓ In Stock
$0.34 / Unit
View Datasheet →BSZ0904NSIATMA1
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →IAUCN08S7L033ATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →BSZ0904NSIATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS (N-channel power MOSFET) |
| Drain-Source Voltage (VDS) max | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 18 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A |
| On-State Resistance RDS(on) max at VGS=4.5V | 4 mOhm |
| Power Dissipation at Ta | 2.1 W |
| Power Dissipation at Tc | 37 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TSDSON-8-FL (PQFN 3.3x3.3) |
| Mounting Type | Surface Mount |
| Integrated Schottky-like Diode | Yes (monolithic) |
| Avalanche Rated | 100% avalanche tested |
| Qualification | JEDEC qualified for target applications |
| Lead Plating | Pb-free |
| RoHS Status | Compliant |
| Halogen-Free | Yes |
BSZ0904NSIATMA1 Pin Configuration
| Pin 1 | S — Source (also connected to exposed pad) |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
| Pin PAD | D — Drain (exposed thermal pad) |
Safe Operating Area - BSZ0904NSIATMA1
Typical Applications
BSZ0904NSIATMA1 is suitable for 6 applications: Server Point-of-Load (POL) Buck Converter, Datacom and Telecom DC-DC Brick Converters, High-Current Synchronous Buck Voltage Regulators, Industrial 24V Bus Power Conversion, USB-PD and High-Current Type-C Chargers, Hot-Swap and ORing Applications in Computing.
Server Point-of-Load (POL) Buck Converter
The BSZ0904NSIATMA1's 4 mΩ max RDS(on) at VGS=4.5V and 40 A TC current rating make it well suited as the low-side SyncFET in 12V-input multiphase buck converters feeding server CPUs, GPUs, and ASICs. The integrated monolithic Schottky-like diode suppresses body-diode reverse recovery during dead-time, reducing switching losses that dominate at multi-MHz switching frequencies. The 3.3x3.3 mm PQFN footprint enables high power density on the POL stage PCB. Thermal design uses the exposed pad bonded to substantial inner-layer copper to keep junction temperature within the -55C to +150C operating range under continuous 30-40 A loads.
Recommended
Datacom and Telecom DC-DC Brick Converters
In 48V-input isolated and non-isolated brick converters for datacom and telecom equipment, the BSZ0904NSIATMA1 serves as the secondary-side synchronous rectifier where its low RDS(on) minimizes conduction loss across the wide telecom load range. The 30V VDS rating gives ample headroom for 12V and lower secondary rails with substantial transient margin. OptiMOS technology's low Qg and Qrr reduce driver losses and improve light-load efficiency, helping meet 80 PLUS Titanium efficiency targets in modern AC-DC front-end systems. The PQFN 3.3x3.3 footprint supports the dense SMD layouts typical of quarter-brick and eighth-brick form factors.
Recommended
High-Current Synchronous Buck Voltage Regulators
As a dedicated SyncFET in high-current synchronous buck converters, the BSZ0904NSIATMA1 delivers the lowest on-state resistance in its footprint class, per the Infineon OptiMOS 30V positioning. The integrated Schottky-like diode enables operation with shorter dead-times, which reduces body-diode conduction loss and improves thermal margin at high switching frequencies. Designers benefit from the 100% avalanche-tested rating that allows inductive-switching events without catastrophic failure. The 37 W TC power dissipation rating permits 30-40 A continuous load current with appropriate PCB copper area for heat spreading.
Recommended
Industrial 24V Bus Power Conversion
The BSZ0904NSIATMA1 is rated for 30V VDS, providing sufficient voltage margin for 24V industrial bus rails with substantial transient headroom for inductive spikes and load-dump events. Its 40 A TC current and 4 mΩ RDS(on) enable 24V-to-12V/5V/3.3V buck converters for industrial PLCs, motor-control boards, and factory-automation systems. The JEDEC-qualified temperature range of -55C to +150C supports harsh industrial environments. Pb-free lead plating and RoHS compliance ensure the part meets global industrial environmental directives including halogen-free requirements for European markets.
Recommended
USB-PD and High-Current Type-C Chargers
USB-Power-Delivery chargers operating at 20V input levels require synchronous rectification MOSFETs that handle continuous 5-10 A with minimal conduction loss; the BSZ0904NSIATMA1 fits as the secondary-side SyncFET in flyback or active-clamp topologies. The 30V VDS rating accommodates 20V PD outputs with substantial overshoot margin. The compact 3.3x3.3 mm PQFN footprint helps fit high-power-density 100W+ USB-PD adapters. The low RDS(on) directly improves charger efficiency at full load, helping meet DOE Level VI and EU CoC Tier-2 efficiency requirements.
Recommended
Hot-Swap and ORing Applications in Computing
The BSZ0904NSIATMA1's 30V VDS rating and 40A TC current capability make it suitable for 12V hot-swap and ORing MOSFET roles in server and storage systems. Its low RDS(on) reduces steady-state power dissipation in always-on paths, while the 100% avalanche rating provides ruggedness during hot-plug inrush events. The PQFN 3.3x3.3 package enables dense SMD layouts typical of server backplanes and storage controllers, and the exposed thermal pad allows efficient heat spreading into inner copper layers. The OptiMOS technology platform ensures low Qg for clean turn-on characteristics.
Recommended
Recommended Products Summary
Engineering reference data for BSZ0904NSIATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSZ0904NSI | BSZ0901NSIATMA1 | BSZ0901NSI | IAUCN08S7L033ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TSDSON-8-FL (PQFN 3.3x3.3) | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) max | 30 V | 30 V | 30 V | 30 V | 80 V |
| RDS(on) max at VGS=4.5V | 4 mOhm | 4 mOhm | 1 mOhm class (lower RDS(on)) | 1 mOhm class (lower RDS(on)) | 3.3 mOhm class |
| Integrated Schottky-like Diode | Yes | Yes | Yes | Yes | Yes |
| Technology Family | OptiMOS 30V | OptiMOS 30V | OptiMOS 30V | OptiMOS 30V | OptiMOS (80V class) |
| RoHS / Halogen-Free | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes |
Key Differentiators
- Integrated monolithic Schottky-like diode for SyncFET applications (vs BSZ0901NSIATMA1)
- Lowest RDS(on) in PG-TSDSON-8-FL class for 30 V OptiMOS (vs IAUCN08S7L033ATMA1)
- JEDEC-qualified and 100% avalanche-tested for rugged applications (vs BSZ0904NSI (base MPN))
Design Notes
Estimated: at 30 A continuous load with VGS=4.5 V drive, conduction loss is P = I^2 x RDS(on) = 30^2 x 0.004 = 3.6 W (input values: ID=30 A, RDS(on)=4 mOhm). The PQFN 3.3x3.3 exposed-pad package requires sufficient PCB copper to maintain junction temperature below 150C. Use at least 1 square inch of inner-layer copper tied to the exposed pad, with thermal vias (0.3 mm drill, 1 mm pitch, 8-12 vias minimum) to spread heat into the inner plane. Without adequate copper, the part will thermally limit at well below the 40 A TC rating.
Place the gate-driver IC within 5 mm of the gate pin to minimize parasitic inductance in the gate loop. Use a 10 Ohm gate-source resistor for damping and a 10 kOhm pull-down on the gate to prevent accidental turn-on during power-up. The exposed pad must be soldered to the drain copper pour using multiple thermal vias - solder-starvation at the exposed pad is the most common reliability failure for PQFN MOSFETs. Per IPC-7093, follow land-pattern recommendations exactly and avoid via-in-pad unless the fab supports filled-via construction.
Do not operate this part from a gate drive below 4.5 V - RDS(on) is specified at VGS=4.5V and rises sharply at lower gate voltages, causing unexpected conduction losses. Verify the gate-driver UVLO threshold is below 4.0 V to ensure full enhancement at cold temperature. The integrated Schottky-like diode reduces dead-time loss but does not eliminate it - dead-time must still be optimized to 20-30 ns for best efficiency. Watch for body-diode reverse-recovery dV/dt-induced VGS spikes on the low-side FET; add gate-source clamp if ringing exceeds +/-10V.
Compliance Information
Pb-free lead plating, RoHS compliant, halogen-free molding compound, JEDEC qualified per Infineon OptiMOS datasheet. Not AEC-Q100 qualified - for automotive applications, select an AEC-Q100 graded Infineon OptiMOS variant instead.
