IAUCN10S7N021ATMA1 vs ISC080N10NM6ATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7N021ATMA1
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 β ActiveInfineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S7N021ATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $1.05 |
| FET Type | N-Channel | β |
| Technology | OptiMOSβ’ 7 (trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Tc | 175 A | 75 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10 V | 2.1 mΞ© | β |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | β |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | β |
| Input Capacitance (Ciss) | 2.98 nF | β |
| Output Capacitance (Coss) | 32 pF | β |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | β |
| Power Dissipation (Pd) @ Tc | 217 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TDSON-8 FL (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | Industrial grade (per Infineon OptiMOS 6 100V family) |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOSβ’ 6 100V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 100 V |
| Continuous Drain Current (ID) at Ta | β | 13 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | β | 8.05 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 3.3 V at 36 Β΅A |
| Operating Temperature Range | β | -55Β°C to +175Β°C (TJ max, per datasheet) |
| MSL Level | β | 1 (per JEDEC J-STD-020, per datasheet) |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |