IAUT300N08S5N012ATMA2 vs ISC080N10NM6ATMA1 Comparison

Detailed side-by-side comparison of IAUT300N08S5N012ATMA2 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Active

Specification Comparison

Parameter IAUT300N08S5N012ATMA2 ISC080N10NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.20 $1.05
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V OptiMOS™ 6 100V
Transistor Type N-Channel MOSFET
Drain-to-Source Voltage (VDS) 80 V
Continuous Drain Current (ID, Tc=25°C) 300 A
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ
Maximum Power Dissipation (PD, Tc) 375 W
Gate-to-Source Voltage (VGS) ±20 V
Operating Temperature Range -55 °C to +175 °C (TJ) -55°C to +175°C (TJ max, per datasheet)
Package PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-TDSON-8 FL (TDSON EP)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified
RoHS Compliance Compliant
MSL Level [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020, per datasheet)
Polarity / Channel Type N-Channel
Drain-Source Voltage (VDS) Max 100 V
Continuous Drain Current (ID) at Ta 13 A
Continuous Drain Current (ID) at Tc 75 A
Power Dissipation (PD) at Ta 3 W
Power Dissipation (PD) at Tc 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA
RoHS Status Compliant
Lead-Free Yes
Halogen-Free Yes
Qualification Industrial grade (per Infineon OptiMOS 6 100V family)

Datasheets & Resources

Browse All Products Create BOM Request Quote