IAUZ30N06S5L140ATMA1 vs IPD031N06L3GATMA1 Comparison

Detailed side-by-side comparison of IAUZ30N06S5L140ATMA1 by Infineon and IPD031N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUZ30N06S5L140ATMA1 IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 βœ“ Active

Specification Comparison

Parameter IAUZ30N06S5L140ATMA1 IPD031N06L3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.96 $0.48
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID, Tc) 30 A (Tj) β€”
Power Dissipation (PD, Tc) 33 W β€”
RDS(on) Max @ VGS=10 V 14 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 2.2 V (typ) 1.0 V to 2.2 V
Total Gate Charge (Qg) 12.2 nC @ VGS=10 V β€”
Output Capacitance (Coss) 888 pF @ VDS=30 V β€”
Package PG-TSDSON-8-32 (S3O8, 3x3 mm) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55Β°C to +175Β°C β€”
Technology Family OptiMOS 5 β€”
Automotive Grade AEC-Q101 qualified β€”
Gate-Source Voltage Max Β±20 V β€”
Lead-Free / RoHS Yes (RoHS compliant) β€”
Technology β€” MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at TC=25Β°C β€” 100 A
Pulsed Drain Current (IDM) β€” 400 A
Maximum Power Dissipation (PD) at TC=25Β°C β€” 167 W
RDS(on) Max at VGS=10V β€” 3.1 mΞ©
Gate Drive Voltage (Max RDS(on)) β€” 4.5 V, 10 V
Total Gate Charge (Qg) Typ β€” [DATA_NEEDED: Qg typical value]
Operating Temperature Range β€” -55Β°C to +175Β°C
Series β€” OptiMOS 3
MSL Level β€” 1 (Unlimited)
RoHS Status β€” Compliant

Datasheets & Resources

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