IDD06SG60CXTMA2 vs IGD06N60TATMA1 Comparison
Detailed side-by-side comparison of IDD06SG60CXTMA2 by Infineon and IGD06N60TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IDD06SG60CXTMA2 - 600V 6A CoolSiC G3 SiC Schottky Diode | Infineon
IDD06SG60CXTMA2 β ActiveSpecification Comparison
| Parameter | IDD06SG60CXTMA2 | IGD06N60TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Diodes | Transistors |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.54 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiCβ’ Schottky Diode G3 (thinQβ’) | β |
| Diode Configuration | Single | β |
| Technology | Silicon Carbide (SiC) Schottky | β |
| Reverse Voltage (VRRM) | 600 V | β |
| Continuous Forward Current (IF) | 6 A | β |
| Repetitive Peak Forward Current (IFRM) | [DATA_NEEDED: IFRM] | β |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 32 A | β |
| Forward Voltage (VF) at IF=6A | 2.1 V (typical) | β |
| Reverse Current (IR) Max | 500 nA | β |
| Total Capacitive Charge (Qc) | [DATA_NEEDED: Qc value] | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -40 Β°C to +175 Β°C |
| Package / Case | PG-TO252-3 (DPAK) | β |
| Mounting Style | Surface Mount (SMD/SMT) | β |
| Packaging | Cut Tape (Tape & Reel per factory standard) | β |
| RoHS Status | Compliant | Compliant |
| Series | β | TRENCHSTOP IGBT3 |
| IGBT Type | β | Trench Field Stop |
| Collector-Emitter Voltage (VCE) | β | 600 V |
| Continuous Collector Current (IC) at TC=25Β°C | β | 12 A |
| Continuous Collector Current (IC) at TC=100Β°C | β | 6 A |
| Maximum Pulsed Collector Current (ICM) | β | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | β | 88 W |
| Gate-Emitter Voltage (VGE) | β | Β±20 V |
| VCE(sat) at IC=6A, VGE=15V, Tj=25Β°C | β | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | β | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | β | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | β | [DATA_NEEDED: Eoff] |
| Integrated Diode | β | Yes, soft-recovery emitter-controlled diode |
| Storage Temperature | β | -55 Β°C to +150 Β°C |
| Package | β | PG-TO252-3-11 (DPAK / TO-252) |
| Mounting Type | β | Surface Mount |
| Lead-Free | β | Yes |