IDD06SG60CXTMA2 - 600V 6A CoolSiC G3 SiC Schottky Diode | Infineon
MPN: IDD06SG60CXTMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.62 | $26.20 |
| 100 | $2.18 | $218.00 |
| 500 | $1.86 | $930.00 |
| 1,000 | $1.54 | $1,540.00 |
IDD06SG60CXTMA2 Overview
What is a SiC Schottky diode? A silicon-carbide Schottky diode is a majority-carrier rectifying device formed by a metal-semiconductor junction on a wide-bandgap SiC substrate, rather than the silicon PiN structure used in conventional rectifiers. This places it within the hierarchy: Schottky diode -> rectifier -> discrete semiconductor -> power device. Compared to silicon PiN diodes, SiC Schottky devices eliminate reverse-recovery charge (Qr), enabling near-zero switching losses and allowing the upstream MOSFET or IGBT to operate at much higher dv/dt and switching frequency. The G3 generation specifically targets the lowest device capacitance per amp rating in the industry, which further reduces switching loss at light load and high frequency.
Key specifications include 600 V reverse-voltage rating, 6 A continuous forward current, 32 A non-repetitive peak forward surge current (IFSM), and a maximum reverse current of 500 nA. Operating junction temperature spans -55 °C to +175 °C, exceeding silicon-diode limits and enabling operation in sealed, high-ambient enclosures. The thinQ G3 construction also delivers an improved Figure-of-Merit (Qc × VF) versus G2, which directly translates into lower converter loss and higher power density.
The diode's primary use cases are the boost/PFC free-wheeling and output rectifiers of switch-mode power supplies (SMPS), totem-pole bridgeless PFC stages, solar inverters, EV on-board chargers, industrial motor drives, and UPS systems. The combination of zero reverse recovery and high-temperature operation makes it especially valuable in hard-switched continuous-conduction-mode (CCM) PFC circuits where silicon-diode reverse-recovery current creates significant EMI and conduction loss.
When designing with the IDD06SG60CXTMA2, observe the same creepage and clearance rules used for any 600 V discrete in a TO-252 footprint. The tab is internally connected to the cathode on most DPAK Schottky variants - confirm with the manufacturer pinout before sharing thermal vias with the switching node. Use a Kelvin-source connection to the controlling MOSFET gate driver to keep the SiC diode's fast transients from coupling into the gate loop.
This page synthesizes distributor pricing, parametric drop-in alternatives, and applied design notes (PFC stage, totem-pole, solar inverter) that the manufacturer datasheet alone does not lay out in application-ready form.
Drop-in alternatives for IDD06SG60CXTMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IDD06SG60CXTMA2 (same form factor and footprint) — differing in Operating Junction Temperature, Package, Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IDD06SG60CXTMA1
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IDD09SG60C
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IDD04SG60C
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STPSC6H065D
✅ Drop-In📋 Reference alternative (not in catalog)
DSR6U600D1-13
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IDD06SG60CXTMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC™ Schottky Diode G3 (thinQ™) |
| Diode Configuration | Single |
| Technology | Silicon Carbide (SiC) Schottky |
| Reverse Voltage (VRRM) | 600 V |
| Continuous Forward Current (IF) | 6 A |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 32 A |
| Forward Voltage (VF) at IF=6A | 2.1 V (typical) |
| Reverse Current (IR) Max | 500 nA |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package / Case | PG-TO252-3 (DPAK) |
| Mounting Style | Surface Mount (SMD/SMT) |
| Packaging | Cut Tape (Tape & Reel per factory standard) |
| RoHS Status | Compliant |
IDD06SG60CXTMA2 Pin Configuration
| Pin 1 | Cathode (K) / Tab — Cathode connection; internally bonded to the metal tab. Mounting tab is the primary thermal path. |
| Pin 2 | Cathode (K) — Cathode connection, signal pin (electrically common with tab). |
| Pin 3 | Anode (A) — Anode connection; current flows from this pin to the cathode/tab in forward bias. |
Forward Current vs Forward Voltage (IF vs VF) - DC Steady-State
Typical Applications
IDD06SG60CXTMA2 is suitable for 6 applications: Continuous-Conduction-Mode (CCM) PFC Rectifier, Totem-Pole Bridgeless PFC Slow Leg, Solar String Inverter Boost/Output Stage, EV On-Board Charger (OBC) PFC/Output Rectifier, Industrial Motor Drive Brake/Clamp Diode, Telecom / Server SMPS Output Rectifier.
Continuous-Conduction-Mode (CCM) PFC Rectifier
The IDD06SG60CXTMA2 is the canonical rectifier choice for the boost-diode position of a hard-switched CCM power-factor-correction stage in 1-3 kW SMPS. Its zero reverse-recovery charge (Qr) eliminates the shoot-through current that occurs when a silicon PiN boost diode turns off while the MOSFET is already switching on - directly lowering PFC-stage switching loss by 30-50% versus the MUR460-class equivalent. With VRRM = 600 V and IF = 6 A continuous, it covers universal-input (85-265 VAC) front ends with the typical 390 VDC bus. At 100 kHz CCM operation, the SiC G3 device's lower capacitive charge (Qc) further reduces dv/dt-induced EMI, often eliminating a stage of common-mode filtering. Use a 10 Ω / 10 nF RC snubber to limit voltage overshoot below the 600 V rating under abnormal load steps.
Recommended
Totem-Pole Bridgeless PFC Slow Leg
In a totem-pole bridgeless PFC, the IDD06SG60CXTMA2 is the preferred device for the slow-frequency leg rectifier that conducts during the AC line half-cycle. The SiC Schottky eliminates the second-order reverse-recovery losses that make silicon ultrafast diodes impractical in this topology at switching frequencies above 50 kHz. At 6 A continuous, it matches the typical 1.5-3 kW server/telecom PSU power level. The 175 °C junction rating allows sealed-housing operation where ambient inside the chassis reaches 90 °C, with the DPAK's exposed tab providing a low thermal-resistance path to a 1 oz copper pour. Pair with a 600 V GaN HEMFET (e.g., GS66508B) on the high-frequency leg for maximum efficiency, and add TVS clamping to protect the SiC diode from line-side transients.
Recommended
Solar String Inverter Boost/Output Stage
The IDD06SG60CXTMA2 is deployed as the output rectifier and reverse-polarity blocking diode in residential 1.5-3 kW string inverters connecting a 400-500 VDC PV bus to the grid-tie stage. Its 600 V rating provides > 30% safety margin on a 400 VDC maximum-power-point bus, and the zero-Qr behavior preserves the efficiency of the upstream interleaved boost converter even at 50 kHz+ switching. Reverse current of 500 nA maximum is two orders of magnitude better than silicon equivalents, reducing night-time parasitic loss across the PV array. The DPAK SMD package supports fully automated assembly and IR-reflow soldering, which is critical for high-volume solar manufacturing. Use thermal vias under the tab to a 2 oz inner-layer copper pour to keep Tj rise below 50 °C at full 6 A load.
Recommended
EV On-Board Charger (OBC) PFC/Output Rectifier
The IDD06SG60CXTMA2 is suitable for the 6.6-11 kW on-board charger (OBC) PFC boost and isolation-stage output rectifier positions. Its 175 °C junction rating tolerates the under-hood thermal environment where ambient can exceed 105 °C, and the zero reverse-recovery behavior enables 200 kHz+ switching in the LLC and PFC stages that silicon-diode OBC designs cannot reach. At 6 A average forward current, it aligns with the typical OBC secondary-side current at the lower power tier. The DPAK package simplifies the secondary-side PCB layout where SMD is preferred. Combine with automotive-grade AEC-Q101 qualified MOSFETs (e.g., IPB60R099P7) for a fully automotive-qualified power train; note that IDD06SG60CXTMA2 itself is industrial-grade and would require an AEC-Q101 sister part for OEM automotive deployment.
Recommended
Industrial Motor Drive Brake/Clamp Diode
In 400 V industrial variable-frequency drives (VFDs), the IDD06SG60CXTMA2 is used as the brake-chopper diode across the DC bus to dissipate regenerative energy into the braking resistor. Its 600 V rating covers the 700 V transient peaks of a 480 VAC rectified bus with adequate derating, and the 32 A IFSM handles the repetitive braking surges without thermal fatigue. Compared to silicon PiN diodes of the same current class, the SiC Schottky removes the reverse-recovery oscillations that couple into the IGBT gate-drive loop, reducing the need for additional gate-snubber components. The -55 °C minimum operating temperature supports outdoor-rated drives and cold-storage applications. Mount on an insulated thermal pad if the tab's cathode potential cannot share the chassis ground.
Recommended
Telecom / Server SMPS Output Rectifier
The IDD06SG60CXTMA2 is used as the secondary-side rectifier in 48 V telecom and 12 V server SMPS converters, particularly in the 1-2 kW tier where silicon Schottky diodes' higher Qr becomes a switching-loss bottleneck above 200 kHz. Its zero reverse-recovery behavior enables hardswitched full-bridge or LLC topologies to operate efficiently at 300-500 kHz, shrinking the magnetic components and improving power density. The 6 A continuous rating matches a typical 600 W output at 100 V secondary. The DPAK's small footprint is assembly-friendly for high-volume server PSU production. Use synchronous rectification (with 100 V MOSFETs) instead if the output voltage is below ~30 V, where the 2.1 V VF would otherwise dominate conduction loss.
Recommended
Recommended Products Summary
Engineering reference data for IDD06SG60CXTMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IDH06SG60C | IDD09SG60C | STPSC6H065D | DSR6U600D1-13 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same family) | Infineon (same family) | STMicroelectronics | Diodes Incorporated |
| Package | PG-TO252-3 (DPAK) | PG-TO220-3 (TO-220AB) - through-hole | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Reverse Voltage (VRRM) | 600 V | 600 V | 600 V | 650 V | 600 V |
| Continuous Forward Current (IF) | 6 A | 6 A | 9 A | 6 A | 6 A |
| Operating Junction Temperature | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -40 °C to +175 °C | -55 °C to +175 °C |
| Technology Family | CoolSiC™ thinQ™ G3 SiC Schottky | CoolSiC G3 SiC Schottky | CoolSiC G3 SiC Schottky | ST SiC Schottky (Gen-2) | Diodes Inc. SiC Schottky |
Key Differentiators
- Industry-lowest capacitance per amp rating (G3 generation) (vs STPSC6H065D (ST Gen-2))
- High-volume industrial availability in DPAK SMD (vs IDH06SG60C (TO-220 through-hole))
- 175 °C maximum junction temperature (industrial leading class) (vs DSR6U600D1-13 (Diodes Incorporated SiC))
Design Notes
Estimated: At IF=6 A continuous with VF=2.1 V, conduction dissipation is 12.6 W. The PG-TO252-3 (DPAK) has a typical θJA of ~50 °C/W on a 1 oz 1-square-inch copper pad at JEDEC EIA/JESD51 standard test conditions, giving a junction rise of ~63 °C above ambient. For reliable operation at 6 A continuous in a 70 °C ambient, drop the average forward current to ~4 A or expand the copper pad to 2 square inches (θJA drops to ~35 °C/W). Add thermal vias (6-8 × 0.3 mm) under the tab to an inner 2 oz copper plane for additional θJA reduction.
Keep the SiC diode's switching-node loop (anode lead → die → cathode tab) area as small as practical. The fast dv/dt (> 50 V/ns typical for SiC G3) couples strongly into the gate loop of the controlling MOSFET; route the gate-driver return trace to the MOSFET source (Kelvin connection), NOT to the diode's tab ground. Place the diode's input/output decoupling capacitors within 3 mm of its pins. Use a 100 V/µm-creepage guard ring around the cathode tab if the anode is switching above 400 V on a single-layer PCB.
Critical pitfalls: (1) The DPAK tab is internally common with the cathode - never assume it is a separate thermal-only pad like an IGBT. (2) Do not parallel IDD06SG60CXTMA2 devices without per-diode series inductors (10-100 nH) - the G3's low thermal coefficient of VF does NOT balance current sharing as well as a silicon PiN. (3) Avoid using the IDD06SG60CXTMA2 below ~50 kHz switching in CCM PFC, where silicon ultrafast diodes remain more cost-effective. (4) Verify reverse blocking voltage margin: 600 V VRRM only derates linearly to 500 V at 175 °C Tj.
Compliance Information
RoHS and REACH compliant per Infineon product page. Halogen-free per Infineon CoolSiC family declaration. Industrial-grade; not AEC-Q100/Q101 qualified - for automotive deployment, use the AEC-Q101 sister part IDD06SG60CAQ (if available) or request automotive-grade status from Infineon sales.
