IPA60R190C6XKSA1 vs IPW60R080P7XKSA1 Comparison

Detailed side-by-side comparison of IPA60R190C6XKSA1 by Infineon and IPW60R080P7XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPA60R190C6XKSA1 IPA60R190C6XKSA1 - 600V 20.2A CoolMOS C6 N-MOSFET | Infineon

IPA60R190C6XKSA1 - 600V 20.2A CoolMOS C6 N-MOSFET | Infineon

IPA60R190C6XKSA1 βœ“ Active
Infineon
IPW60R080P7XKSA1 IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 βœ“ Active

Specification Comparison

Parameter IPA60R190C6XKSA1 IPW60R080P7XKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $2.65
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS C6 CoolMOS P7
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25C) 20.2 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (PD, Tc=25C) 34 W β€”
On-State Resistance (RDS(on)) 190 mOhm at VGS=10V, ID=9.5A β€”
Gate Threshold Voltage (VGS(th)) 3.5 V β€”
Gate Charge (Qg, typ) [DATA_NEEDED: Qg typ] [DATA_NEEDED: Qg value]
Operating Temperature Range -55C to +150C -55 C to +150 C (junction)
Package PG-TO220-FP (TO-220 FullPAK, 3+tab) PG-TO247-3 (TO-247, 3-pin through-hole)
Mounting Type Through Hole Through Hole
Tab Isolation Fully isolated (4 kV) β€”
RoHS Status Compliant Compliant
Lead Free Yes β€”
Continuous Drain Current (ID, Tc) β€” 37 A
Power Dissipation (PD, Tc) β€” 129 W
RDS(on) (typ) β€” 69 mΞ© at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) β€” 3.5 V (typ, per datasheet family)
Rise Time / Fall Time (tr/tf) β€” [DATA_NEEDED: tr/tf value]
Packaging β€” Tube (XKSA1 ordering suffix)

Datasheets & Resources

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