IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon
MPN: IPW60R080P7XKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.78 | $37.80 |
| 100 | $3.35 | $335.00 |
| 500 | $2.95 | $1,475.00 |
| 1,000 | $2.65 | $2,650.00 |
IPW60R080P7XKSA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify electrical signals in power conversion circuits. Within the broader taxonomy it belongs to the discrete semiconductor family, specifically the FET (field-effect transistor) hypernym, then MOSFET (metal-oxide-semiconductor FET), then high-voltage superjunction MOSFET family, and finally the CoolMOS P7 product line. Superjunction MOSFETs like the P7 use a charge-balance structure that simultaneously reduces on-state resistance and switching losses - a breakthrough versus conventional planar MOSFETs at 600 V.
Key features include the integrated gate protection, integrated snubber-less design, 0.4 V VGS(th) low threshold voltage, and best-in-class RDS(on) per package area for this voltage class. The CoolMOS P7 platform also brings an integrated protection diode and ease-of-use characteristics such as simple gate drive requirements, making it well-suited to high-frequency switched-mode power supplies.
Technically the IPW60R080P7XKSA1 uses Infineon's 600 V superjunction technology with optimized cell pitch. The avalanche ruggedness and dv/dt ruggedness allow operation in hard-switching and zero-voltage-switching topologies. With a typical Coss (output capacitance) and low gate charge, switching losses are reduced at typical 100 kHz to 200 kHz switching frequencies found in SMPS designs.
Typical applications include PFC stages, LLC and quasi-resonant flyback converters in telecom/server SMPS, solar inverters, EV charging, and industrial motor drives. The wide 600 V rating also fits off-line converters from rectified 230 V AC rails.
When designing with this part, pay attention to gate driver voltage and dv/dt layout: although the part is rugged, minimizing the drain-source dv/dt with proper gate resistance and PCB layout reduces EMI and ringing.
Drop-in alternatives for IPW60R080P7XKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPW60R080P7XKSA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, Gate Threshold Voltage (VGS(th)), On-State Resistance (RDS(on)), Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPW60R070P7XKSA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R099P6XKSA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R041P7XKSA1
✅ Drop-In📋 Reference alternative (not in catalog)
STW47N60M2
✅ Drop-In📋 Reference alternative (not in catalog)
STF28N60M2
✅ Drop-In📋 Reference alternative (not in catalog)
IRFP4668PBF
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IPW60R080P7XKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS P7 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc) | 37 A |
| Power Dissipation (PD, Tc) | 129 W |
| RDS(on) (typ) | 69 mΩ at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V (typ, per datasheet family) |
| Operating Temperature Range | -55 C to +150 C (junction) |
| Package | PG-TO247-3 (TO-247, 3-pin through-hole) |
| Mounting Type | Through Hole |
| Packaging | Tube (XKSA1 ordering suffix) |
| RoHS Status | Compliant |
IPW60R080P7XKSA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate control input |
| Pin 2 | Drain (Tab) — MOSFET drain, internally connected to metal tab |
| Pin 3 | Source — MOSFET source |
Safe Operating Area (SOA)
Typical Applications
IPW60R080P7XKSA1 is suitable for 7 applications: Power Factor Correction Stage (PFC), LLC Resonant Converter, Solar String Inverter, EV On-Board Charger PFC Stage, Industrial Motor Drive Inverter, Telecom Server SMPS (Front-End Rectifier), Welding and Plasma Power Supplies.
Power Factor Correction Stage (PFC)
The IPW60R080P7XKSA1 fits perfectly in continuous-conduction-mode (CCM) boost PFC stages fed from rectified 230 V AC mains. With 600 V VDS headroom and 69 mΩ RDS(on), conduction loss at 50 Hz line cycle remains below 2 W at 2 kW PFC output, while the CoolMOS P7 superjunction technology reduces switching loss vs the older P6 generation. Pair it with a UCC28180 or NCP1654 CCM-PFC controller for best results.
Recommended
LLC Resonant Converter
The IPW60R080P7XKSA1's low RDS(on) and optimized output capacitance make it suitable for half-bridge and full-bridge LLC resonant converters in telecom/server SMPS. Operating between 100 kHz and 200 kHz, the MOSFET keeps switching losses manageable while delivering the 600 V margin required for rectified 380 V DC bus. Verify ZVS operation across the load range for best efficiency.
Recommended
Solar String Inverter
The IPW60R080P7XKSA1 is used in the DC-DC boost stage and DC-AC inverter section of single-phase solar inverters from 3 kW to 5 kW. The 600 V rating handles up to 1000 V DC string open-circuit voltage with adequate margin, while 37 A continuous drain current supports full-power operation without paralleling. CoolMOS P7's integrated snubber-less design reduces BOM cost versus older P6 generations.
Recommended
EV On-Board Charger PFC Stage
The IPW60R080P7XKSA1 fits as the main boost switch in 3.3 kW to 11 kW on-board EV charger PFC front-ends. With AEC-Q101 potential applicability and 600 V VDS rating, it handles rectified 230 V or 400 V AC mains reliably. The 129 W power dissipation and TO-247-3 package enable straightforward thermal management with a clip-mounted heatsink in IP65 sealed enclosures.
Recommended
Industrial Motor Drive Inverter
The IPW60R080P7XKSA1 is used in three-phase IGBT/MOSFET inverter modules for industrial motor drives from 1 kW to 5 kW. Although IGBTs dominate at very high currents, MOSFETs excel at higher switching frequencies (>20 kHz) for low-inductance motors or sinusoidal filter applications. The rugged TO-247-3 mechanical construction survives vibration in industrial environments.
Recommended
Telecom Server SMPS (Front-End Rectifier)
The IPW60R080P7XKSA1 is ideal for 1U/2U server front-end rectifiers running from 230 V AC input and delivering 48 V or 12 V DC output. In the boost PFC and LLC primary stage, the 600 V rating provides margin against voltage transients, while low switching losses enable >96% peak efficiency. The TO-247-3 footprint is compatible with the Infineon reference design for 2400 W 48 V SMPS modules.
Recommended
Welding and Plasma Power Supplies
The IPW60R080P7XKSA1's 600 V VDS rating, avalanche ruggedness, and ability to handle peak surge currents make it suitable for inverter welding and plasma cutter power supplies. The TO-247-3 package handles the thermal stress of pulsed loads, while the low RDS(on) minimizes conduction loss at welding arc currents of 100-200 A peak.
Recommended
Recommended Products Summary
Engineering reference data for IPW60R080P7XKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPW60R070P7XKSA1 | IPW60R099P6XKSA1 | IPW60R041P7XKSA1 | STW47N60M2 | STF28N60M2 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | STMicroelectronics |
| Package | PG-TO247-3 | PG-TO247-3 - same | PG-TO247-3 - same | PG-TO247-3 - same | TO-247-3 - same | TO-247-3 - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| RDS(on) typ | 69 mΩ | ~70 mΩ | ~99 mΩ | ~41 mΩ | ~70 mΩ | ~150 mΩ |
| Continuous Drain Current | 37 A | ~40 A | ~37 A | ~57 A | ~39 A | ~28 A |
| Power Dissipation (Tc) | 129 W | ~135 W | ~125 W | ~170 W | ~150 W | ~110 W |
| Generation / Family | CoolMOS P7 | CoolMOS P7 | CoolMOS P6 (older) | CoolMOS P7 | MDmesh M2 | MDmesh M2 |
| Integrated Snubber | Yes | Yes | No | Yes | No | No |
| Unit Price (qty 1, USD) | 4.20 | 4.65 | 3.10 | 7.20 | 5.50 | 3.80 |
Key Differentiators
- CoolMOS P7 superjunction technology reduces switching losses versus CoolMOS P6 (vs IPW60R099P6XKSA1)
- Integrated snubber / gate protection features (vs STW47N60M2)
- Wide RDS(on) scaling within same package family (vs IPW60R041P7XKSA1)
Design Notes
Estimated: at continuous ID = 37 A, conduction loss alone is roughly P_cond = ID^2 * RDS(on) = 37^2 * 0.069 = 94 W. Combined with switching loss at 100 kHz in hard-switching, total dissipation typically exceeds the 129 W Tc rating without a substantial heatsink. Use a TO-247 clip-on heatsink rated for <0.5 C/W with forced airflow, or compute junction temperature with TJ = TC + PD * RthJC and verify TJ < 150 C.
For through-hole TO-247-3 mounting, drill 1.5 mm holes with 2 mm copper pad annular ring. Keep the drain tab copper pour wide enough to act as a heatsink (at least 200 sq cm per side). Route gate traces away from drain to minimize dv/dt coupling, and place the gate driver within 30 mm to minimize parasitic inductance that can cause ringing above 50 V on the gate.
Do not exceed VGS rating of +/-20 V (some Infineon P7 parts allow +/-30 V transient); gate-source breakdown is irreversible. Always add a 10 kohm gate-source pull-down resistor to keep the MOSFET off during MCU power-up. In paralleled configurations, ensure matched gate-driver impedances and balanced source inductances to avoid current hogging and thermal runaway.
Although CoolMOS P7 has fast switching edges (dV/dt up to 50 V/ns), the snubber-less internal design helps EMI. Add a small RC snubber (10 ohm + 1 nF) across the drain-source if radiated EMI exceeds CISPR 22/32 limits. Place the snubber within 5 mm of the device pins to be effective.
Compliance Information
RoHS compliant per Infineon product page. Industrial-grade part; AEC-Q100 qualification does not apply to the standard XKSA1 suffix - check automotive-grade variants separately. Lead-free reflow: TO-247-3 is through-hole with wave soldering, manual soldering, or pin-in-paste reflow compatible.
