IPB017N10N5LFATMA1 vs BSC040N10NS5ATMA1 Comparison
Detailed side-by-side comparison of IPB017N10N5LFATMA1 by Infineon and BSC040N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB017N10N5LFATMA1
IPB017N10N5LFATMA1 - 100V 1.7mΞ© OptiMOS 5 Linear FET | Infineon
IPB017N10N5LFATMA1 β ActiveInfineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IPB017N10N5LFATMA1 | BSC040N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.05 | $0.93 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 Linear FET | β |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide Semiconductor) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 180 A | β |
| Continuous Drain Current (ID) @ TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Maximum Power Dissipation (PD) @ TC=25C | 313 W | β |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 1.7 mΞ© (max) | β |
| Gate-Source Voltage (VGS) Max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +150C |
| Package / Case | PG-TO263-7 (D2PAK-7), surface mount | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | β |
| Avalanche Rated | Yes | β |
| Linear-Mode (SOA) Optimized | Yes (OptiMOS Linear FET) | β |
| Maximum On-Resistance (RDS(on)) | β | 4 mOhm |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) max | β | 136 A |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 139 W |
| Package | β | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Output Capacitance Reduction | β | Up to 44% vs previous generation |
| RDS(on) Reduction | β | Up to 43% vs previous generation |
| Automotive Qualification | β | AEC-Q101 (per Infineon OptiMOS 5 family) |