IPB017N10N5LFATMA1 vs IPB025N10N3GATMA1 Comparison

Detailed side-by-side comparison of IPB017N10N5LFATMA1 by Infineon and IPB025N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB017N10N5LFATMA1

IPB017N10N5LFATMA1 - 100V 1.7mΞ© OptiMOS 5 Linear FET | Infineon

IPB017N10N5LFATMA1 βœ“ Active

Specification Comparison

Parameter IPB017N10N5LFATMA1 IPB025N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.05 $3.74
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 Linear FET β€”
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide Semiconductor) OptiMOS 3 trench MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 180 A β€”
Continuous Drain Current (ID) @ TC=100C [DATA_NEEDED: ID at TC=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] β€”
Maximum Power Dissipation (PD) @ TC=25C 313 W β€”
Drain-Source On-Resistance (RDS(on)) @ VGS=10V 1.7 mΞ© (max) β€”
Gate-Source Voltage (VGS) Max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] β€”
Operating Temperature Range -55C to +175C (junction) -55C to +175C (junction)
Package / Case PG-TO263-7 (D2PAK-7), surface mount β€”
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 (unlimited) 1 (unlimited)
Avalanche Rated Yes β€”
Linear-Mode (SOA) Optimized Yes (OptiMOS Linear FET) β€”
Continuous Drain Current (ID) at Tc β€” 180 A
Power Dissipation (PD) at Tc β€” 300 W
RDS(on) Typical at VGS=10V, ID=100A β€” 2.5 mΞ©
Gate-Source Threshold Voltage (VGS(th)) β€” 3.5 V
Input Capacitance (Ciss) β€” 2.58 nF
Gate Charge (Qg) Typical β€” [DATA_NEEDED: Qg value]
Package β€” PG-TO263-7 (D2PAK-7) 6+Tab
Halogen-Free β€” Yes

Datasheets & Resources

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