IPB021N10NM5LF2ATMA1 vs IPB024N10N5ATMA1 Comparison
Detailed side-by-side comparison of IPB021N10NM5LF2ATMA1 by Infineon and IPB024N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 β ActiveInfineon
IPB024N10N5ATMA1 - 100V 2.4mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 β ActiveSpecification Comparison
| Parameter | IPB021N10NM5LF2ATMA1 | IPB024N10N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.75 | $1.86 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 5 Linear FET 2 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D) at T_C=25Β°C | 176 A | β |
| Continuous Drain Current (I_D) at T_A=25Β°C | 30 A | β |
| R_DS(on) Maximum | 2.1 mΞ© | β |
| Gate-Source Voltage (V_GS) Maximum | Β±20 V [DATA_NEEDED: absolute max rated V_GS] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | β |
| Power Dissipation (P_D) at T_C=25Β°C | 375 W | β |
| Power Dissipation (P_D) at T_A=25Β°C | 3.8 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55C to +175C (junction) |
| Package | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-TO263-7 (D2PAK-7) |
| Mounting Type | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | β |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | 1 (unlimited floor life at <30C/85% RH) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, TC=25C) | β | 180 A |
| Power Dissipation (PD, TC=25C) | β | 250 W |
| On-Resistance RDS(on) max @ VGS=10V | β | 2.4 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typ @ VGS=10V | β | [DATA_NEEDED: Qg total gate charge] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total gate charge] |
| Input Capacitance Ciss | β | [DATA_NEEDED: Ciss value] |
| Output Capacitance Coss | β | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | β | [DATA_NEEDED: Qrr value] |
| Packaging | β | Tape & Reel (13-inch reel) |
| Halogen-Free | β | Yes (per Infineon product family policy) |