IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
MPN: IPB024N10N5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.42 | $34.20 |
| 100 | $2.96 | $296.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.18 | $2,180.00 |
| 3,000 | $1.86 | $5,580.00 |
IPB024N10N5ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field on the gate to control current flow between drain and source terminals. Within the broader component taxonomy, this device belongs to the discrete MOSFET family, which itself is a subcategory of discrete semiconductors, ultimately classified under power semiconductors. The N-channel enhancement-mode variant (the most common topology) requires a positive gate-source voltage (VGS(th) typically in the 1-3 V range) to turn on, while the underlying OptiMOS 5 trench technology minimizes both on-state resistance and gate charge, achieving figures of merit (FOM) that previous planar generations could not match.
Key specifications include 100 V drain-source breakdown voltage (VDS), 2.4 mΩ maximum RDS(on) at VGS=10 V, gate charge (Qg) optimized for fast switching, and a low thermal resistance path via the D2PAK-7 surface-mount package with an exposed die-attach pad. The ATMA1 suffix indicates Tape & Reel packaging on a 13-inch reel for high-volume SMT assembly. The part's low Qrr body-diode reverse recovery further supports synchronous rectification topologies where dead-time losses matter.
The OptiMOS 5 technology platform uses an advanced shielded-gate trench cell structure that shrinks die area for a given RDS(on) target and reduces internal capacitances (Ciss, Coss, Crss) compared to OptiMOS 3 and earlier generations. The result is a MOSFET that simultaneously lowers conduction loss (lower RDS(on)), switching loss (lower Qg and Qoss), and thermal resistance, enabling higher power density in telecom and server SMPS designs without increasing switching frequency-driven EMI.
Typical applications include synchronous rectification in 48 V telecom bus converters, OR-ing and hot-swap controllers in server power shelves, battery protection circuits in 48 V eMobility and energy storage systems, high-current motor drive stages in industrial equipment, and DC load switching in solar combiner boxes. The 100 V rating provides sufficient margin above the 48 V telecom bus for transient suppression requirements. Compared with predecessor OptiMOS 3 parts at the same voltage class, the IPB024N10N5ATMA1 claims roughly 22% lower RDS(on) in the same D2PAK-7 footprint, enabling direct upgrades.
When designing with this device, ensure that the gate driver can source and sink the required peak gate current to charge and discharge the gate capacitance within the target switching interval, and verify that the PCB layout keeps the high-current source-power loop area minimized. Use the exposed pad as the primary thermal path; inadequate copper area on the drain tab will throttle continuous current well below the 180 A rating.
This page synthesizes distributor pricing, drop-in alternatives in the same D2PAK-7 footprint, application recommendations, and practical design notes that complement - and in some cases go beyond - what the manufacturer datasheet alone provides.
Drop-in alternatives for IPB024N10N5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB024N10N5ATMA1 (same form factor and footprint) — differing in Package, Technology, MSL Level, Operating Temperature Range, Configuration.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB021N10NM5LF2ATMA1
✅ Drop-In✓ In Stock
$2.75 / Unit
View Datasheet →IPB020N08N5ATMA1
✅ Drop-In✓ In Stock
$1.45 / Unit
View Datasheet →BSC098N10NS5ATMA1
✅ Drop-In✓ In Stock
$0.55 / Unit
View Datasheet →BSC070N10NS5ATMA1
✅ Drop-In✓ In Stock
$0.68 / Unit
View Datasheet →IPB031N08N5ATMA1
✅ Drop-In✓ In Stock
$2.62 / Unit
View Datasheet →IPT015N10NF2SATMA1
✅ Drop-In✓ In Stock
$3.1 / Unit
View Datasheet →IPB024N10N5ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, TC=25C) | 180 A |
| Power Dissipation (PD, TC=25C) | 250 W |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ |
| Operating Temperature Range | -55C to +175C (junction) |
| Package | PG-TO263-7 (D2PAK-7) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) |
| Packaging | Tape & Reel (13-inch reel) |
| Halogen-Free | Yes (per Infineon product family policy) |
IPB024N10N5ATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Source — Source (low-side return) |
| Pin 3 | Source — Source (parallel pin for low RDS(on)) |
| Pin 4 | Source — Source (parallel pin for low RDS(on)) |
| Pin 5 | Source — Source (parallel pin for low RDS(on)) |
| Pin 6 | Source — Source (parallel pin for low RDS(on)) |
| Pin 7 | Drain — Drain (also the metal tab on the back of the package) |
Safe Operating Area (SOA) - IPB024N10N5ATMA1
Typical Applications
IPB024N10N5ATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Server OR-ing and Hot-Swap, Battery Protection (eMobility / Energy Storage), Industrial Motor Drive H-Bridge, Solar Combiner Box DC Disconnect, High-Current DC Load Switching.
48V Telecom Synchronous Rectification
The IPB024N10N5ATMA1 is engineered specifically for 48 V telecom bus synchronous rectification in isolated DC-DC converters (typically full-bridge or push-pull topologies feeding a 12 V or 5 V secondary). Its 2.4 mΩ RDS(on) at 10 V VGS minimizes conduction loss in the secondary-side rectifier position where current can reach 80-120 A peak. The OptiMOS 5 platform's low Qrr (body-diode reverse recovery charge) is critical for CCM operation at 100-200 kHz switching frequency, where dead-time losses from poor Qrr can dominate total rectifier losses. The 100 V VDS rating provides 2x margin above the 48 V nominal rail, absorbing telecom transient requirements (typically ±100 V surge).
Recommended
Server OR-ing and Hot-Swap
The IPB024N10N5ATMA1 serves as the OR-ing MOSFET in -48 V redundant server power architectures, where two independent power supplies feed a common load and the MOSFET prevents back-feeding into a failed source. Its low RDS(on) of 2.4 mΩ keeps voltage drop and conduction loss low even at 50-80 A continuous load current; at 60 A the part dissipates approximately 8.6 W (versus 11 W for a 3 mΩ competitor), reducing heatsink requirements. The D2PAK-7 surface-mount package enables automated assembly, and the high 180 A current rating provides ample margin for inrush currents during hot-swap events when combined with appropriate gate-drive slew-rate control.
Recommended
Battery Protection (eMobility / Energy Storage)
In 48 V battery protection circuits for light electric vehicles, e-mobility, and stationary energy storage systems, the IPB024N10N5ATMA1 functions as the discharge FET or main disconnect switch. Its 2.4 mΩ on-resistance limits the voltage drop across the protection FET at full discharge current (typically 50-100 A continuous), preserving usable battery capacity. The 100 V VDS rating provides adequate margin above the 48 V nominal battery voltage plus transient spikes from motor-regenerative events. The -55C to +175C junction temperature range supports under-hood automotive and outdoor energy storage installations. The OptiMOS 5 process is qualified to Infineon's industrial reliability standards.
Recommended
Industrial Motor Drive H-Bridge
The IPB024N10N5ATMA1 is used as the high-side or low-side switch in industrial H-bridge motor driver stages operating from 48-72 V DC bus with motor currents up to 100 A continuous. The 2.4 mΩ RDS(on) keeps conduction dissipation manageable at high PWM duty cycles, while the OptiMOS 5 fast switching enables 20-50 kHz PWM frequencies without excessive switching loss. The D2PAK-7 package supports the high peak current demands of motor startup and braking regen events. The 100 V rating tolerates back-EMF transients from inductive motor loads. The wide -55C to +175C junction range supports industrial environment specifications including unconditioned factory floors.
Recommended
Solar Combiner Box DC Disconnect
In photovoltaic combiner boxes and DC disconnect switches for solar installations, the IPB024N10N5ATMA1 provides the main isolation switch function for string-level disconnects. Its 100 V VDS rating supports 1000-1500 V system strings when paired with appropriate series MOSFET stacks (3-4 in series per pole). The 2.4 mΩ RDS(on) minimizes standing loss in always-conducting combiner topologies; at 30 A continuous per string, the part dissipates only 2.2 W versus 3.5 W for a typical 4 mΩ alternative. The D2PAK-7 surface-mount package reduces assembly labor versus through-hole alternatives, important for high-volume combiner box production. The wide temperature range handles outdoor enclosure ambient conditions.
Recommended
High-Current DC Load Switching
The IPB024N10N5ATMA1 functions as a solid-state DC switch in high-current load management circuits including battery isolation, load shedding, and pre-charge control for large capacitor banks. Its 2.4 mΩ RDS(on) limits steady-state voltage drop; at 100 A continuous the switch dissipates 24 W - manageable with a 50x50 mm copper pour on the drain tab. The 180 A current rating provides headroom for momentary overload conditions (motor inrush, capacitor charging transients). The 100 V VDS rating is sufficient for 48 V systems with full transient margin. The TO-263-7 surface-mount package with exposed die-attach pad provides low thermal resistance for high continuous current.
Recommended
Recommended Products Summary
Engineering reference data for IPB024N10N5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB021N10NM5LF2ATMA1 | IPB020N08N5ATMA1 | BSC098N10NS5ATMA1 | IPB031N08N5ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO263-7 (D2PAK-7) | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TDSON-8 (D2PAK-7 footprint compatible) | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 80 V | 100 V | 80 V | 100 V |
| RDS(on) max @ VGS=10V | 2.4 mΩ | 2.1 mΩ | 2.0 mΩ | 9.8 mΩ | 3.1 mΩ | 1.5 mΩ |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Automotive Grade (AEC-Q101) | No (industrial) | No | No | Yes (AEC-Q101) | No | No |
Key Differentiators
- Industry-leading 2.4 mΩ RDS(on) at 100V in D2PAK-7 (vs IPB025N10N3GATMA1 (OptiMOS 3, ~3.1 mΩ))
- OptiMOS 5 low Qrr supports CCM operation at high frequency (vs Older OptiMOS 3 generation)
- Wide 100V VDS rating for 48V telecom transient margin (vs IPT015N10NF2SATMA1 (100V but lower RDS(on)))
- Industrial-grade reliability (not AEC-Q101 qualified) (vs BSC098N10NS5ATMA1 (AEC-Q101 qualified))
Design Notes
At 100 A continuous load, the IPB024N10N5ATMA1 dissipates approximately 24 W (100 A squared × 2.4 mΩ). With the D2PAK-7 thermal resistance of approximately 0.4 C/W junction-to-case and 40-50 C/W junction-to-ambient on a 1 oz 50x50 mm copper pour on FR4, the junction temperature can rise 1000-1200 C above ambient - clearly impossible. Practically, continuous current must be limited to 50-80 A for the part to stay within its 175C junction limit unless significant heatsinking is applied. Always consult the datasheet's thermal de-rating diagram (Diagram 2) for the specific PCB layout used.
The D2PAK-7 drain tab is electrically hot (connected to drain) and serves as the primary thermal path. Use a large copper pour on the drain tab area - at minimum 1 square inch of 2 oz copper, ideally with thermal vias to internal ground planes. Source pins (pins 2-6) should be tied together with a low-impedance plane on an adjacent layer; splitting source connections creates parasitic source inductance that slows switching and increases ringing. Keep the gate-drive loop area minimal - place the gate driver within 5-10 mm of the gate pin.
Do not exceed 100 V VDS, including transient spikes from inductive loads - add a TVS diode or snubber across drain-source if reverse recovery or transformer leakage inductance can produce overshoot above 80 V. The gate is ESD-sensitive (HBM Class 1A, typically); handle with proper ESD precautions during assembly. VGS(th) is typically 2-3 V; ensure the gate driver pulls up to at least 10 V for full RDS(on) rating. Pulling only to 5 V will result in 2-3x higher on-resistance and possible thermal runaway.
For synchronous rectification topologies, minimize the high-current loop area between drain and source of the synchronous FET and the secondary winding of the transformer - this loop carries the pulsating switching current and its parasitic inductance creates voltage spikes and EMI. Use a ground-shielded layout where the source connection of the sync FET returns directly to the transformer's secondary return rather than sharing the main power ground. The gate-drive trace should not cross the power loop; route it on a separate layer or around the perimeter.
Compliance Information
RoHS compliant per Infineon product page. Halogen-free per Infineon OptiMOS 5 family policy. Not AEC-Q101 qualified - this is an industrial-grade part. For AEC-Q101 automotive qualification, see BSC098N10NS5ATMA1 (alternative in same family).
