IPB024N10N5ATMA1 vs BSC098N10NS5ATMA1 Comparison
Detailed side-by-side comparison of IPB024N10N5ATMA1 by Infineon and BSC098N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 β ActiveInfineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IPB024N10N5ATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.86 | $0.55 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, TC=25C) | 180 A | β |
| Power Dissipation (PD, TC=25C) | 250 W | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΞ© | 9.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | [DATA_NEEDED: Qg] |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | β |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | β |
| Operating Temperature Range | -55C to +175C (junction) | [DATA_NEEDED: Tj min/max] |
| Package | PG-TO263-7 (D2PAK-7) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | 1 |
| Packaging | Tape & Reel (13-inch reel) | β |
| Halogen-Free | Yes (per Infineon product family policy) | β |
| Continuous Drain Current (ID, Tc=25C) | β | 60 A |
| Continuous Drain Current (ID, Ta) | β | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (Tc=25C) | β | 69 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Diode Continuous Forward Current (IS) | β | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | β | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | β | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | β | 1.1 V (IF=30 A, Tj=25C) |
| Shipping Packaging | β | Tape & Reel (T/R) |