IPB024N10N5ATMA1 vs IAUC60N10S5L110ATMA1 Comparison
Detailed side-by-side comparison of IPB024N10N5ATMA1 by Infineon and IAUC60N10S5L110ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 β ActiveInfineon
IAUC60N10S5L110ATMA1
IAUC60N10S5L110ATMA1 - 100V 11mΞ© N-Ch OptiMOS 5 | Infineon
IAUC60N10S5L110ATMA1 β ActiveSpecification Comparison
| Parameter | IPB024N10N5ATMA1 | IAUC60N10S5L110ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.86 | $0.66 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, TC=25C) | 180 A | β |
| Power Dissipation (PD, TC=25C) | 250 W | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | β |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | β |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | β |
| Operating Temperature Range | -55C to +175C (junction) | [DATA_NEEDED: min/max operating temperature] |
| Package | PG-TO263-7 (D2PAK-7) | PG-TDSON-8-33 (TDSON-8 Single) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | 1 (per LCSC datasheet snippet) |
| Packaging | Tape & Reel (13-inch reel) | β |
| Halogen-Free | Yes (per Infineon product family policy) | Yes (per Infineon product classification) |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOSβ’-5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 100 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | β | 60 A |
| Power Dissipation (P<sub>D</sub>, Tc) | β | 88 W |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | β | 11 mΞ© |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | β | 1.2 V |
| Gate-Source Voltage (V<sub>GS</sub>) Max | β | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Q<sub>G</sub>) | β | [DATA_NEEDED: Qg at specified Vgs] |
| Avalanche Energy (E<sub>AS</sub>) | β | [DATA_NEEDED: single-pulse avalanche energy] |
| Lead-Free / RoHS | β | Yes (RoHS compliant per LCSC listing) |
| Packing Code | β | ATMA1 (Tape & Reel) |
| Customer Info / FGR | β | J52 (per Infineon product data) |