IPB024N10N5ATMA1 vs IAUCN10S5L110TATMA1 Comparison
Detailed side-by-side comparison of IPB024N10N5ATMA1 by Infineon and IAUCN10S5L110TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 β ActiveInfineon
IAUCN10S5L110TATMA1
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 β ActiveSpecification Comparison
| Parameter | IPB024N10N5ATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.86 | $2.08 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, TC=25C) | 180 A | β |
| Power Dissipation (PD, TC=25C) | 250 W | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | β |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | β |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package | PG-TO263-7 (D2PAK-7) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | MSL1 (260Β°C peak reflow) |
| Packaging | Tape & Reel (13-inch reel) | β |
| Halogen-Free | Yes (per Infineon product family policy) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Continuous Drain Current (ID) at Tj | β | 61 A |
| On-Resistance RDS(on) max at VGS=10V | β | 11.3 mΞ© |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | β | 88 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Storage Temperature | β | [DATA_NEEDED: storage temperature] |
| Avalanche Rated | β | 100% Avalanche Tested |
| Automotive Qualification | β | AEC-Q101 Extended Qualification |