IPB024N10N5ATMA1 vs IPB021N10NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of IPB024N10N5ATMA1 by Infineon and IPB021N10NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 β ActiveInfineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | IPB024N10N5ATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.86 | $2.75 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, TC=25C) | 180 A | β |
| Power Dissipation (PD, TC=25C) | 250 W | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | β |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | β |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | β |
| Operating Temperature Range | -55C to +175C (junction) | -55Β°C to +175Β°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Package | PG-TO263-7 (D2PAK-7) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Packaging | Tape & Reel (13-inch reel) | β |
| Halogen-Free | Yes (per Infineon product family policy) | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 100 V |
| Continuous Drain Current (I_D) at T_C=25Β°C | β | 176 A |
| Continuous Drain Current (I_D) at T_A=25Β°C | β | 30 A |
| R_DS(on) Maximum | β | 2.1 mΞ© |
| Gate-Source Voltage (V_GS) Maximum | β | Β±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25Β°C | β | 375 W |
| Power Dissipation (P_D) at T_A=25Β°C | β | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | β | 10 V, 15 V |