IPB024N10N5ATMA1 vs IPD068N10N3GATMA1 Comparison
Detailed side-by-side comparison of IPB024N10N5ATMA1 by Infineon and IPD068N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 β ActiveInfineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB024N10N5ATMA1 | IPD068N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.86 | $0.65 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, TC=25C) | 180 A | β |
| Power Dissipation (PD, TC=25C) | 250 W | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | β |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | β |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package | PG-TO263-7 (D2PAK-7) | PG-TO252-3 (DPAK, 2 leads + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | 1 |
| Packaging | Tape & Reel (13-inch reel) | β |
| Halogen-Free | Yes (per Infineon product family policy) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IPD068N10N3GATMA1 |
| Continuous Drain Current (ID) at Tc | β | 90 A |
| On-Resistance RDS(on) max | β | 6.8 mOhm |
| Power Dissipation (PD) at Tc | β | 150 W |
| Gate Threshold Voltage VGS(th) | β | 2.0 V to 4.0 V (typical) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Channel Type | β | N-Channel |
| Configuration | β | Single |
| Packing | β | Tape & Reel (T/R) |
| Qualification | β | Industrial (non-automotive) |