IPB025N10N3GATMA1 vs IPB017N10N5LFATMA1 Comparison

Detailed side-by-side comparison of IPB025N10N3GATMA1 by Infineon and IPB017N10N5LFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB017N10N5LFATMA1

IPB017N10N5LFATMA1 - 100V 1.7mΞ© OptiMOS 5 Linear FET | Infineon

IPB017N10N5LFATMA1 βœ“ Active

Specification Comparison

Parameter IPB025N10N3GATMA1 IPB017N10N5LFATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.74 $4.05
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 180 A β€”
Power Dissipation (PD) at Tc 300 W β€”
RDS(on) Typical at VGS=10V, ID=100A 2.5 mΞ© β€”
Gate-Source Threshold Voltage (VGS(th)) 3.5 V β€”
Input Capacitance (Ciss) 2.58 nF β€”
Gate Charge (Qg) Typical [DATA_NEEDED: Qg value] β€”
Package PG-TO263-7 (D2PAK-7) 6+Tab β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55C to +175C (junction)
Technology OptiMOS 3 trench MOSFET MOSFET (Metal Oxide Semiconductor)
MSL Level 1 (unlimited) 1 (unlimited)
RoHS Status Compliant Compliant
Halogen-Free Yes β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5 Linear FET
Continuous Drain Current (ID) @ TC=25C β€” 180 A
Continuous Drain Current (ID) @ TC=100C β€” [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
Maximum Power Dissipation (PD) @ TC=25C β€” 313 W
Drain-Source On-Resistance (RDS(on)) @ VGS=10V β€” 1.7 mΞ© (max)
Gate-Source Voltage (VGS) Max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th)]
Package / Case β€” PG-TO263-7 (D2PAK-7), surface mount
Avalanche Rated β€” Yes
Linear-Mode (SOA) Optimized β€” Yes (OptiMOS Linear FET)

Datasheets & Resources

Browse All Products Create BOM Request Quote